JPS56134792A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS56134792A JPS56134792A JP3979980A JP3979980A JPS56134792A JP S56134792 A JPS56134792 A JP S56134792A JP 3979980 A JP3979980 A JP 3979980A JP 3979980 A JP3979980 A JP 3979980A JP S56134792 A JPS56134792 A JP S56134792A
- Authority
- JP
- Japan
- Prior art keywords
- type
- diodes
- electrodes
- gaas101
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3979980A JPS56134792A (en) | 1980-03-25 | 1980-03-25 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3979980A JPS56134792A (en) | 1980-03-25 | 1980-03-25 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56134792A true JPS56134792A (en) | 1981-10-21 |
Family
ID=12562996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3979980A Pending JPS56134792A (en) | 1980-03-25 | 1980-03-25 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56134792A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0571476A1 (en) * | 1991-02-13 | 1993-12-01 | Univ Melbourne | SEMICONDUCTOR LASER. |
US5440577A (en) * | 1991-02-13 | 1995-08-08 | The University Of Melbourne | Semiconductor laser |
US5568498A (en) * | 1993-09-10 | 1996-10-22 | Telefonaktiebolaget Lm Ericsson | Laser device with laser structures connected in series in an optical cavity |
US5642373A (en) * | 1994-11-07 | 1997-06-24 | Mitsubishi Denki Kabushiki Kaisha | Monolithic semiconductor laser array of radially disposed lasers |
-
1980
- 1980-03-25 JP JP3979980A patent/JPS56134792A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0571476A1 (en) * | 1991-02-13 | 1993-12-01 | Univ Melbourne | SEMICONDUCTOR LASER. |
EP0571476A4 (ja) * | 1991-02-13 | 1994-02-02 | The University Of Melbourne | |
US5440577A (en) * | 1991-02-13 | 1995-08-08 | The University Of Melbourne | Semiconductor laser |
US5568498A (en) * | 1993-09-10 | 1996-10-22 | Telefonaktiebolaget Lm Ericsson | Laser device with laser structures connected in series in an optical cavity |
US5642373A (en) * | 1994-11-07 | 1997-06-24 | Mitsubishi Denki Kabushiki Kaisha | Monolithic semiconductor laser array of radially disposed lasers |
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