JPS56134770A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS56134770A
JPS56134770A JP3835780A JP3835780A JPS56134770A JP S56134770 A JPS56134770 A JP S56134770A JP 3835780 A JP3835780 A JP 3835780A JP 3835780 A JP3835780 A JP 3835780A JP S56134770 A JPS56134770 A JP S56134770A
Authority
JP
Japan
Prior art keywords
gate electrode
mon
film
breakage
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3835780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6239832B2 (enrdf_load_stackoverflow
Inventor
Kohei Higuchi
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3835780A priority Critical patent/JPS56134770A/ja
Publication of JPS56134770A publication Critical patent/JPS56134770A/ja
Publication of JPS6239832B2 publication Critical patent/JPS6239832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
JP3835780A 1980-03-26 1980-03-26 Manufacturing of semiconductor device Granted JPS56134770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3835780A JPS56134770A (en) 1980-03-26 1980-03-26 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3835780A JPS56134770A (en) 1980-03-26 1980-03-26 Manufacturing of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56134770A true JPS56134770A (en) 1981-10-21
JPS6239832B2 JPS6239832B2 (enrdf_load_stackoverflow) 1987-08-25

Family

ID=12523023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3835780A Granted JPS56134770A (en) 1980-03-26 1980-03-26 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56134770A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6239832B2 (enrdf_load_stackoverflow) 1987-08-25

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