JPS56132756A - Secondary electron detector - Google Patents

Secondary electron detector

Info

Publication number
JPS56132756A
JPS56132756A JP3412080A JP3412080A JPS56132756A JP S56132756 A JPS56132756 A JP S56132756A JP 3412080 A JP3412080 A JP 3412080A JP 3412080 A JP3412080 A JP 3412080A JP S56132756 A JPS56132756 A JP S56132756A
Authority
JP
Japan
Prior art keywords
specimen
electron signal
secondary electron
ring
scintillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3412080A
Other languages
Japanese (ja)
Inventor
Takao Kumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3412080A priority Critical patent/JPS56132756A/en
Publication of JPS56132756A publication Critical patent/JPS56132756A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor

Abstract

PURPOSE:To obtain a good reflected electronic image, by approaching to or departing from a specimen, the position of detecting a secondary electron signal or reflected electron signal from the outside of vacuum. CONSTITUTION:When releasing a stopper knob 12 and pushing a hundle 13 into a specimen chamber, the detector position (scintillator 8) will approach to a specimen to be observed 3 to increase the stereo-angle 14. At this position the setting 15 will actuate a microswitch SW16 to control the voltage source 17 thus to turn off the voltage applied to a high voltage ring 7. While when pulling the handle 13 to the outside of the specimen chamber, the scintillator 8 is set in an earth ring 6 to detach the setting 15 from the microswitch SW16 to apply the voltage onto the high voltage ring 7 thus to focus the secondary electron signal generated from said specimen efficiently, but since the stereo-angle is decreased the reflected electron signal is reduced.
JP3412080A 1980-03-19 1980-03-19 Secondary electron detector Pending JPS56132756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3412080A JPS56132756A (en) 1980-03-19 1980-03-19 Secondary electron detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3412080A JPS56132756A (en) 1980-03-19 1980-03-19 Secondary electron detector

Publications (1)

Publication Number Publication Date
JPS56132756A true JPS56132756A (en) 1981-10-17

Family

ID=12405390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3412080A Pending JPS56132756A (en) 1980-03-19 1980-03-19 Secondary electron detector

Country Status (1)

Country Link
JP (1) JPS56132756A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248658U (en) * 1985-09-12 1987-03-25
WO2010097861A1 (en) * 2009-02-27 2010-09-02 株式会社 日立ハイテクノロジーズ Charged particle beam device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248658U (en) * 1985-09-12 1987-03-25
WO2010097861A1 (en) * 2009-02-27 2010-09-02 株式会社 日立ハイテクノロジーズ Charged particle beam device
JP2010199002A (en) * 2009-02-27 2010-09-09 Hitachi High-Technologies Corp Charged particle beam device
US8610060B2 (en) 2009-02-27 2013-12-17 Hitachi High-Technologies Corporation Charged particle beam device

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