JPS56132056A - Photo sensor array device - Google Patents
Photo sensor array deviceInfo
- Publication number
- JPS56132056A JPS56132056A JP3478880A JP3478880A JPS56132056A JP S56132056 A JPS56132056 A JP S56132056A JP 3478880 A JP3478880 A JP 3478880A JP 3478880 A JP3478880 A JP 3478880A JP S56132056 A JPS56132056 A JP S56132056A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- conversion film
- sides
- nesa
- pitch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
- H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Facsimile Heads (AREA)
Abstract
PURPOSE:To facilitate connection of nesa electrodes to integrated circuit elements, by leading out conductor electrodes to both sides of the photoelectric conversion film alternately to extend the array pitch of nesa electrodes by providing spaces of a prescribed length or more in both sides of the photoelectric conversion film formed on the substrate. CONSTITUTION:Photoelectric conversion film 8 having prescribed dimensions and form is formed in the approximate center minimum D=150mm. or more distant from both ends of the upper face of contact fiber substrare 3 by adhesion. Conductor electrodes 7a and 7b consisting of the Cr-Au alloy are led out alternately from light permeable nesa electrodes 6, which are formed in conversion film 8 with pitch P=125mum width by adhesion, to both sides of conversion film 8, and are arranged for forming. Buried angle phi of optical fiber flux 4, thickness (t) of substrate 3, and angle theta of slope 3a of substrate 3 are selected, and pitch P2 of electrodes 7a and 7b adjacent in the same direction is denoted as 250mum. Spaces of minimum 150mm. or more are provided in both sides of conversion film 8 to extend the array pitch of nesa electrodes 6, thus facilitating connection to integrated circuit elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3478880A JPS56132056A (en) | 1980-03-21 | 1980-03-21 | Photo sensor array device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3478880A JPS56132056A (en) | 1980-03-21 | 1980-03-21 | Photo sensor array device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56132056A true JPS56132056A (en) | 1981-10-16 |
Family
ID=12424007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3478880A Pending JPS56132056A (en) | 1980-03-21 | 1980-03-21 | Photo sensor array device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56132056A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0862076A (en) * | 1995-09-14 | 1996-03-08 | Nippondenso Co Ltd | Manufacture of semiconductor pressure sensor |
-
1980
- 1980-03-21 JP JP3478880A patent/JPS56132056A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0862076A (en) * | 1995-09-14 | 1996-03-08 | Nippondenso Co Ltd | Manufacture of semiconductor pressure sensor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3669017D1 (en) | PERFORMANCE SEMICONDUCTOR MODULE WITH CERAMIC SUBSTRATE. | |
DE3587240T2 (en) | THIN FILM SEMICONDUCTOR PHOTODETECTORS FOR POVERTY OPERATION. | |
JPS54116820A (en) | Photo detector | |
JPS5721163A (en) | Optical sensor array device | |
US4426548A (en) | Multilayer wiring structure | |
JPS52137279A (en) | Semiconductor device for optical coupling | |
JPS53140048A (en) | Light receiving element | |
JPS56132056A (en) | Photo sensor array device | |
JPS5598879A (en) | Light emitting element arraying unit | |
JPS648668A (en) | Contact type image sensor | |
JPS57167002A (en) | Focus detecting element | |
JPS5575370A (en) | Original reading device | |
JPS56132058A (en) | Photosensor array device | |
DK523684D0 (en) | LAMINING A TRANSPARENT FILM TO A SUBSTRATE | |
JPS5687377A (en) | Photoinformation reading element | |
JPS5745272A (en) | Manufacture of solid image pick-up element | |
JPS6457120A (en) | Optical displacement detector | |
JPS5710983A (en) | Photo sensor | |
JPS5546571A (en) | Semiconductor light emission device | |
JPS56117474A (en) | One-dimensional image sensor | |
JPS56132057A (en) | Photosensor array device | |
JPS5466788A (en) | Photo coupler | |
JPS6421956A (en) | Contact type image sensor | |
GB1328324A (en) | Solar cell and method of producing solar cells | |
JPS5575378A (en) | Thin film type pickup element |