JPS6421956A - Contact type image sensor - Google Patents

Abstract

PURPOSE:To reduce the leakage current both in the initial phase and operation for increasing the S/N ratio while enhancing the reliability by a method wherein individual electrodes are provided on the substrate side of a photoelectric conversion film while an insulating film is laid between a leading-out wiring from the individual electrodes and the photoelectric conversion film. CONSTITUTION:Multiple individual electrodes 4 comprising light-shielding conductive film arranged in one line and a wiring 5 led out of the individual electrodes 4, an insulating film 7 with a window made on the individual electrodes 4 and covering the wiring 5, a photoelectric conversion semiconductor film 3 in contact with the respective electrodes 4 at the window part of the insulating film 7 and a common electrode 2 in contact with the semiconductor film 3 in the opposite side of the individual electrodes 4 are provided on a transparent insulating substrate 1. Furthermore, light guides 6 reaching the substrate 1 passing through the semiconductor film 3 and the individual electrodes 4 existing at least in the window part of the insulating film 7 are provided. In such a constitution, for example, the light from a light source arranged on the rear side of the transparent substrate 1 passes through the light guides 6 to be reflected on a manuscript surface while the reflected light enters into the photoelectric conversion film 3 to transmit photosignal outputted to a space between the individual electrodes 4 and the common electrode 2.