JPS56131989A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56131989A
JPS56131989A JP3529680A JP3529680A JPS56131989A JP S56131989 A JPS56131989 A JP S56131989A JP 3529680 A JP3529680 A JP 3529680A JP 3529680 A JP3529680 A JP 3529680A JP S56131989 A JPS56131989 A JP S56131989A
Authority
JP
Japan
Prior art keywords
active region
difference
thickness
mode
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3529680A
Other languages
Japanese (ja)
Inventor
Kunio Ito
Takashi Sugino
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3529680A priority Critical patent/JPS56131989A/en
Priority to US06/224,821 priority patent/US4392227A/en
Priority to EP81100192A priority patent/EP0032401B1/en
Priority to CA000368427A priority patent/CA1154852A/en
Priority to DE8181100192T priority patent/DE3171754D1/en
Publication of JPS56131989A publication Critical patent/JPS56131989A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To realize single-mode oscillation with ease by holding an active layer between two curved parts at the position above the level-difference part of a substrate. CONSTITUTION:When the active region is made to have a difference in thickness, there occurs a large difference in refractive index and thereby the condition for a single mode is narrowed. Therefore, the thickness of the active region is made to be fixed both in a part immediately above the level-difference part and in the flat part thereof or to be smaller by several percents in the bend part thereof, and thus it is made to vary moderately with some curvature. Accordingly, the difference in refractive index between the curved part and flat part of the active region depends only on the thickness of the 1st clad layer located between the active region 10 and the substrate 8, and thus it becomes a small value of the about 10<-5>. Therefore, even when the length between two curved parts is extended to about 5mum, the oscillation of a single horizontal mode is possible. In order to confine electric current effectively in the active region 10, it suffices when a cap layer 13 is formed to be n-GaAs, Zn diffusion 14 is performed and thus a part of a diffused front is formed to reach p-Ga1-xAlxAs 11.
JP3529680A 1980-01-14 1980-03-19 Semiconductor laser Pending JPS56131989A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3529680A JPS56131989A (en) 1980-03-19 1980-03-19 Semiconductor laser
US06/224,821 US4392227A (en) 1980-01-14 1981-01-13 Terraced substrate semiconductor laser
EP81100192A EP0032401B1 (en) 1980-01-14 1981-01-13 Semiconductor laser
CA000368427A CA1154852A (en) 1980-01-14 1981-01-13 Semiconductor laser
DE8181100192T DE3171754D1 (en) 1980-01-14 1981-01-13 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3529680A JPS56131989A (en) 1980-03-19 1980-03-19 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56131989A true JPS56131989A (en) 1981-10-15

Family

ID=12437804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3529680A Pending JPS56131989A (en) 1980-01-14 1980-03-19 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56131989A (en)

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