JPS56131963A - Electric field effect transistor and its preparation - Google Patents

Electric field effect transistor and its preparation

Info

Publication number
JPS56131963A
JPS56131963A JP3546580A JP3546580A JPS56131963A JP S56131963 A JPS56131963 A JP S56131963A JP 3546580 A JP3546580 A JP 3546580A JP 3546580 A JP3546580 A JP 3546580A JP S56131963 A JPS56131963 A JP S56131963A
Authority
JP
Japan
Prior art keywords
source electrode
selectively
substrate
concave
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3546580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250991B2 (enrdf_load_stackoverflow
Inventor
Yoichi Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3546580A priority Critical patent/JPS56131963A/ja
Publication of JPS56131963A publication Critical patent/JPS56131963A/ja
Publication of JPS6250991B2 publication Critical patent/JPS6250991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3546580A 1980-03-19 1980-03-19 Electric field effect transistor and its preparation Granted JPS56131963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3546580A JPS56131963A (en) 1980-03-19 1980-03-19 Electric field effect transistor and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3546580A JPS56131963A (en) 1980-03-19 1980-03-19 Electric field effect transistor and its preparation

Publications (2)

Publication Number Publication Date
JPS56131963A true JPS56131963A (en) 1981-10-15
JPS6250991B2 JPS6250991B2 (enrdf_load_stackoverflow) 1987-10-28

Family

ID=12442527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3546580A Granted JPS56131963A (en) 1980-03-19 1980-03-19 Electric field effect transistor and its preparation

Country Status (1)

Country Link
JP (1) JPS56131963A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117171A (ja) * 1982-12-23 1984-07-06 Nec Corp 高周波高出力電界効果トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117171A (ja) * 1982-12-23 1984-07-06 Nec Corp 高周波高出力電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6250991B2 (enrdf_load_stackoverflow) 1987-10-28

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