JPS56131949A - Coupling agent for inorganic insulating film containing silicon and polyimide resin film - Google Patents

Coupling agent for inorganic insulating film containing silicon and polyimide resin film

Info

Publication number
JPS56131949A
JPS56131949A JP3400480A JP3400480A JPS56131949A JP S56131949 A JPS56131949 A JP S56131949A JP 3400480 A JP3400480 A JP 3400480A JP 3400480 A JP3400480 A JP 3400480A JP S56131949 A JPS56131949 A JP S56131949A
Authority
JP
Japan
Prior art keywords
coupling agent
polyimide resin
resin film
chelate compound
inorganic insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3400480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6312108B2 (enrdf_load_stackoverflow
Inventor
Shinetsu Fujieda
Naoyuki Kokuni
Shiyuichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3400480A priority Critical patent/JPS56131949A/ja
Publication of JPS56131949A publication Critical patent/JPS56131949A/ja
Publication of JPS6312108B2 publication Critical patent/JPS6312108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP3400480A 1980-03-19 1980-03-19 Coupling agent for inorganic insulating film containing silicon and polyimide resin film Granted JPS56131949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3400480A JPS56131949A (en) 1980-03-19 1980-03-19 Coupling agent for inorganic insulating film containing silicon and polyimide resin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3400480A JPS56131949A (en) 1980-03-19 1980-03-19 Coupling agent for inorganic insulating film containing silicon and polyimide resin film

Publications (2)

Publication Number Publication Date
JPS56131949A true JPS56131949A (en) 1981-10-15
JPS6312108B2 JPS6312108B2 (enrdf_load_stackoverflow) 1988-03-17

Family

ID=12402287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3400480A Granted JPS56131949A (en) 1980-03-19 1980-03-19 Coupling agent for inorganic insulating film containing silicon and polyimide resin film

Country Status (1)

Country Link
JP (1) JPS56131949A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002097492A1 (fr) * 2001-05-30 2002-12-05 Hitachi Chemical Co.,Ltd. Element optique, procede de fabrication d'elements optiques, et dispositif et procede de revetement
CN110066595A (zh) * 2019-03-22 2019-07-30 嘉兴科联信新材料有限公司 一种改性聚酰亚胺润滑涂覆组合物、固体润滑涂层及其应用

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03171505A (ja) * 1989-11-29 1991-07-25 Tokyo Electric Co Ltd 照明器具

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002097492A1 (fr) * 2001-05-30 2002-12-05 Hitachi Chemical Co.,Ltd. Element optique, procede de fabrication d'elements optiques, et dispositif et procede de revetement
US7139460B2 (en) * 2001-05-30 2006-11-21 Hitachi Chemical Company, Ltd. Optical element, method of producing optical elements, coating device, and coating method
CN100456063C (zh) * 2001-05-30 2009-01-28 日立化成工业株式会社 光学元件、光学元件的制造方法、涂布装置及涂布方法
CN110066595A (zh) * 2019-03-22 2019-07-30 嘉兴科联信新材料有限公司 一种改性聚酰亚胺润滑涂覆组合物、固体润滑涂层及其应用

Also Published As

Publication number Publication date
JPS6312108B2 (enrdf_load_stackoverflow) 1988-03-17

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