JPS56129340A - Method of dividing platelike material - Google Patents

Method of dividing platelike material

Info

Publication number
JPS56129340A
JPS56129340A JP3186280A JP3186280A JPS56129340A JP S56129340 A JPS56129340 A JP S56129340A JP 3186280 A JP3186280 A JP 3186280A JP 3186280 A JP3186280 A JP 3186280A JP S56129340 A JPS56129340 A JP S56129340A
Authority
JP
Japan
Prior art keywords
groove
wafer
beams
elements
platelike
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3186280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6239539B2 (sl
Inventor
Ken Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3186280A priority Critical patent/JPS56129340A/ja
Publication of JPS56129340A publication Critical patent/JPS56129340A/ja
Publication of JPS6239539B2 publication Critical patent/JPS6239539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/009—Working by laser beam, e.g. welding, cutting or boring using a non-absorbing, e.g. transparent, reflective or refractive, layer on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP3186280A 1980-03-13 1980-03-13 Method of dividing platelike material Granted JPS56129340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3186280A JPS56129340A (en) 1980-03-13 1980-03-13 Method of dividing platelike material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3186280A JPS56129340A (en) 1980-03-13 1980-03-13 Method of dividing platelike material

Publications (2)

Publication Number Publication Date
JPS56129340A true JPS56129340A (en) 1981-10-09
JPS6239539B2 JPS6239539B2 (sl) 1987-08-24

Family

ID=12342853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3186280A Granted JPS56129340A (en) 1980-03-13 1980-03-13 Method of dividing platelike material

Country Status (1)

Country Link
JP (1) JPS56129340A (sl)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63295093A (ja) * 1987-01-30 1988-12-01 ウアルター・ダブリユ・ダーレイ 金属のレーザー加工効率を向上させる手段
JPS6424469A (en) * 1987-07-20 1989-01-26 Sanyo Electric Co Photosensor manufacturing equipment
JPH01266983A (ja) * 1988-04-20 1989-10-24 Hitachi Seiko Ltd プリント基板穴明機
JPH04180649A (ja) * 1990-11-15 1992-06-26 Nec Yamagata Ltd 半導体チップサンプリング装置
JPH0929472A (ja) * 1995-07-14 1997-02-04 Hitachi Ltd 割断方法、割断装置及びチップ材料
JP2001179473A (ja) * 1999-12-24 2001-07-03 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザー光を用いた基板の分断方法及び半導体装置の作製方法
EP1291117A1 (de) * 2001-09-07 2003-03-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit Laserstrahlung
WO2006038713A1 (en) * 2004-10-07 2006-04-13 Showa Denko K.K. Production method for semiconductor device
JP2006203251A (ja) * 2004-10-07 2006-08-03 Showa Denko Kk 半導体素子の製造方法
JP2007043100A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2007142277A (ja) * 2005-11-21 2007-06-07 Matsushita Electric Works Ltd 発光素子の製造方法
JP2012039128A (ja) * 2011-09-20 2012-02-23 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法
JP2012199399A (ja) * 2011-03-22 2012-10-18 Panasonic Corp レーザ加工方法及びレーザ加工装置
JP2013058536A (ja) * 2011-09-07 2013-03-28 Disco Abrasive Syst Ltd デバイスウェーハの分割方法
JP2016025112A (ja) * 2014-07-16 2016-02-08 株式会社ディスコ レーザー切断方法及びレーザー加工装置
JP2016030293A (ja) * 2014-07-29 2016-03-07 久元電子股▲ふん▼有限公司 レーザー切断方法及びその装置
WO2020090891A1 (ja) * 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138080U (sl) * 1988-03-15 1989-09-21
JP4851918B2 (ja) * 2006-11-24 2012-01-11 株式会社ディスコ ウエーハのレーザー加工方法およびレーザー加工装置

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63295093A (ja) * 1987-01-30 1988-12-01 ウアルター・ダブリユ・ダーレイ 金属のレーザー加工効率を向上させる手段
JPS6424469A (en) * 1987-07-20 1989-01-26 Sanyo Electric Co Photosensor manufacturing equipment
JPH01266983A (ja) * 1988-04-20 1989-10-24 Hitachi Seiko Ltd プリント基板穴明機
JPH04180649A (ja) * 1990-11-15 1992-06-26 Nec Yamagata Ltd 半導体チップサンプリング装置
JPH0929472A (ja) * 1995-07-14 1997-02-04 Hitachi Ltd 割断方法、割断装置及びチップ材料
JP2001179473A (ja) * 1999-12-24 2001-07-03 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザー光を用いた基板の分断方法及び半導体装置の作製方法
EP1291117A1 (de) * 2001-09-07 2003-03-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit Laserstrahlung
EP1520653A1 (de) * 2001-09-07 2005-04-06 Siemens Aktiengesellschaft Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit zwei unterschiedlichen Lasern
WO2006038713A1 (en) * 2004-10-07 2006-04-13 Showa Denko K.K. Production method for semiconductor device
JP2006203251A (ja) * 2004-10-07 2006-08-03 Showa Denko Kk 半導体素子の製造方法
US7498184B2 (en) 2004-10-07 2009-03-03 Showa Denko K.K. Production method for semiconductor device
JP2007043100A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2007142277A (ja) * 2005-11-21 2007-06-07 Matsushita Electric Works Ltd 発光素子の製造方法
JP2012199399A (ja) * 2011-03-22 2012-10-18 Panasonic Corp レーザ加工方法及びレーザ加工装置
JP2013058536A (ja) * 2011-09-07 2013-03-28 Disco Abrasive Syst Ltd デバイスウェーハの分割方法
JP2012039128A (ja) * 2011-09-20 2012-02-23 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法
JP2016025112A (ja) * 2014-07-16 2016-02-08 株式会社ディスコ レーザー切断方法及びレーザー加工装置
JP2016030293A (ja) * 2014-07-29 2016-03-07 久元電子股▲ふん▼有限公司 レーザー切断方法及びその装置
WO2020090891A1 (ja) * 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置

Also Published As

Publication number Publication date
JPS6239539B2 (sl) 1987-08-24

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