JPS5612737A - Apparatus for coating semiconductor with glass - Google Patents

Apparatus for coating semiconductor with glass

Info

Publication number
JPS5612737A
JPS5612737A JP8796379A JP8796379A JPS5612737A JP S5612737 A JPS5612737 A JP S5612737A JP 8796379 A JP8796379 A JP 8796379A JP 8796379 A JP8796379 A JP 8796379A JP S5612737 A JPS5612737 A JP S5612737A
Authority
JP
Japan
Prior art keywords
glass
disc
semiconductor
immersed
circumference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8796379A
Other languages
Japanese (ja)
Other versions
JPS596511B2 (en
Inventor
Kesamitsu Yamaguchi
Isao Ozeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP8796379A priority Critical patent/JPS596511B2/en
Publication of JPS5612737A publication Critical patent/JPS5612737A/en
Publication of JPS596511B2 publication Critical patent/JPS596511B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain the semiconductor device higher in the massproductivity and the reliability by coating the semiconductor with glass at an upper end while the side of a disc rotating on a horizontal center shaft is immersed in a glass liquid tank at a lower end. CONSTITUTION:The disc 1 for applying glass is made of synthetic resin or metal and fixed on the rotating shaft 3 directly connected to a motor 2. The disc 1 rotates in the direction of the arrow A with the side thereof sticking to the glass slurry while immersed in the slurrylike glass liquid 5 in the tank 4 at the lower end. On the top of the disc 1, the semiconductor comprising the electrode 7 and the lead wire 8 sandwitching the silicon laminated semiconductor 6 is arranged on the rail 9 parallel to the center shaft of the disc 1. The space between the upper end and the circumference of the semiconductor 6 and the electrode 7 is smaller than the thickness of the glass slurry attached on the disc side. The glass slurry 5 adheres to the circumference of the semiconductor 6 wetting it.
JP8796379A 1979-07-11 1979-07-11 Glass coating equipment for semiconductor devices Expired JPS596511B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8796379A JPS596511B2 (en) 1979-07-11 1979-07-11 Glass coating equipment for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8796379A JPS596511B2 (en) 1979-07-11 1979-07-11 Glass coating equipment for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5612737A true JPS5612737A (en) 1981-02-07
JPS596511B2 JPS596511B2 (en) 1984-02-13

Family

ID=13929505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8796379A Expired JPS596511B2 (en) 1979-07-11 1979-07-11 Glass coating equipment for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS596511B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59153615A (en) * 1983-02-23 1984-09-01 Nissan Motor Co Ltd Bonded window structure
JPS6053620U (en) * 1983-09-22 1985-04-15 マツダ株式会社 Automobile window glass mounting structure
JPH02133225A (en) * 1988-11-14 1990-05-22 Daihatsu Motor Co Ltd Window glass adhering method for automobile

Also Published As

Publication number Publication date
JPS596511B2 (en) 1984-02-13

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