JPS56118348A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56118348A
JPS56118348A JP2142580A JP2142580A JPS56118348A JP S56118348 A JPS56118348 A JP S56118348A JP 2142580 A JP2142580 A JP 2142580A JP 2142580 A JP2142580 A JP 2142580A JP S56118348 A JPS56118348 A JP S56118348A
Authority
JP
Japan
Prior art keywords
oxidized film
gate
electrode
sio2
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2142580A
Other languages
English (en)
Inventor
Kazunari Shirai
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2142580A priority Critical patent/JPS56118348A/ja
Publication of JPS56118348A publication Critical patent/JPS56118348A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
JP2142580A 1980-02-22 1980-02-22 Semiconductor device Pending JPS56118348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2142580A JPS56118348A (en) 1980-02-22 1980-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2142580A JPS56118348A (en) 1980-02-22 1980-02-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56118348A true JPS56118348A (en) 1981-09-17

Family

ID=12054635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2142580A Pending JPS56118348A (en) 1980-02-22 1980-02-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56118348A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1128427A3 (en) * 2000-02-23 2004-10-13 Infineon Technologies North America Corp. Manufacturing semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1128427A3 (en) * 2000-02-23 2004-10-13 Infineon Technologies North America Corp. Manufacturing semiconductor devices

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