JPS56114899A - Single crystal of aluminum phosphate - Google Patents

Single crystal of aluminum phosphate

Info

Publication number
JPS56114899A
JPS56114899A JP1395080A JP1395080A JPS56114899A JP S56114899 A JPS56114899 A JP S56114899A JP 1395080 A JP1395080 A JP 1395080A JP 1395080 A JP1395080 A JP 1395080A JP S56114899 A JPS56114899 A JP S56114899A
Authority
JP
Japan
Prior art keywords
container
alpo
sealed
iii
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1395080A
Other languages
Japanese (ja)
Inventor
Norihiro Sano
Shogo Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP1395080A priority Critical patent/JPS56114899A/en
Publication of JPS56114899A publication Critical patent/JPS56114899A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide an aluminum phosphate single crystal having a coupling constant larger than that of quartz and a temperature coefficient of frequency of the same level to quartz, by growing the crystal of aluminum phosphate doped with a III-group element.
CONSTITUTION: A mixture of commercially available AlPO4 powder and the oxide and/or hydroxide of a III-group element is put to the bottom of a container made of Teflon. The container is filled with H3PO4 solution, sealed, heated rapidly to 160°C, kept at 160°C for 24hr, heated to 250°C at a rate of 10°C/day, and cooled after the desired period. The crystals larger than 60 mesh are separated from the product and used as the raw material 1. The raw material 1 and seed crystals 2 are set in the Teflon container 4, a definite amount of H3PO4 solution is poured into the container 4, and the container 4 is sealed and set in an autoclave 3, which is then sealed with a cover 5, a packing 6 and a screw head 7. After growing the crystal for a definite period at a constant temperature, the single crystal of AlPO4 deped with impurities wherein a part of Al constituting AlPO4 is substituted by a III-group element, is obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP1395080A 1980-02-07 1980-02-07 Single crystal of aluminum phosphate Pending JPS56114899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1395080A JPS56114899A (en) 1980-02-07 1980-02-07 Single crystal of aluminum phosphate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1395080A JPS56114899A (en) 1980-02-07 1980-02-07 Single crystal of aluminum phosphate

Publications (1)

Publication Number Publication Date
JPS56114899A true JPS56114899A (en) 1981-09-09

Family

ID=11847477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1395080A Pending JPS56114899A (en) 1980-02-07 1980-02-07 Single crystal of aluminum phosphate

Country Status (1)

Country Link
JP (1) JPS56114899A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022186A (en) * 1987-12-15 1990-01-08 Avl Ges Verbrennungskraftmas & Messtech Mbh Piezoelectric crystal device and its manufacture
US4992694A (en) * 1988-11-25 1991-02-12 AVL Gesellschaft fur Verbrennungskraftmaschinen und Messtechnik m.b.H. Prof.Dr.Dr.h.c. Hans List Piezoelectric crystal element on the basis of GAPO4

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356198A (en) * 1976-11-01 1978-05-22 Hitachi Ltd Preparation of ultraphosphate crystals
JPS5469595A (en) * 1977-11-14 1979-06-04 Seiko Instr & Electronics Ltd A po4 single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356198A (en) * 1976-11-01 1978-05-22 Hitachi Ltd Preparation of ultraphosphate crystals
JPS5469595A (en) * 1977-11-14 1979-06-04 Seiko Instr & Electronics Ltd A po4 single crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022186A (en) * 1987-12-15 1990-01-08 Avl Ges Verbrennungskraftmas & Messtech Mbh Piezoelectric crystal device and its manufacture
AT393183B (en) * 1987-12-15 1991-08-26 Avl Verbrennungskraft Messtech PIEZOELECTRIC CRYSTAL ELEMENT AND METHOD FOR PRODUCING THE SAME
JPH055388B2 (en) * 1987-12-15 1993-01-22 Aa Fuau Eru G Fuyua Fueaburenungusu Kurafutomashiinen Unto Mesutehiniku Gmbh Purofuetsusaa Dokutaa Dokutaa Haa Tsuee Hansu Risuto
US4992694A (en) * 1988-11-25 1991-02-12 AVL Gesellschaft fur Verbrennungskraftmaschinen und Messtechnik m.b.H. Prof.Dr.Dr.h.c. Hans List Piezoelectric crystal element on the basis of GAPO4

Similar Documents

Publication Publication Date Title
JPS56114895A (en) Manufacture of high purity single crystal by czochralski crucible pullinggup method
Kolb et al. Hydrothermal synthesis of aluminum orthophosphate
DE3377874D1 (en) Method of growing silicon crystals by the czochralski method
JPS56114899A (en) Single crystal of aluminum phosphate
JPS57183392A (en) Apparatus for preparation of single crystal
JPS56100200A (en) Method and apparatus for manufacturing gallium arsenide single crystal
JPS5777098A (en) Method and apparatus for growing znse in liquid phase
JPS54122682A (en) Single crystal growing device
JPS5562893A (en) Single crystal growth observing device
JPS5577868A (en) Preparation of powdery honey
JPS55140792A (en) Manufacture of 3-5 group compound semiconductor single crystal
JPS57123888A (en) Preparation of single crystal of compound semiconductor
JPS54127897A (en) Manufacture of coarse calcium hypochlorite dihydrate
JPS5492597A (en) Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method
SU1520027A1 (en) Method of obtaining fine-crystalline alpha-quartz
JPS5520232A (en) Production of 3-5 group compound crystal
JPS5529905A (en) Production of artificial honey
JPS5571698A (en) Production of gadolinium gallium garnet single crystal
JPS53149875A (en) Preparing apparatus for semiconductor crystal
JPS5684397A (en) Single crystal growing method
JPS5551795A (en) Artificial rock crystal and growing method therefor
JPS5523070A (en) Production of lithium tantalate single crystal
JPS54128990A (en) Growing method for single crystal of gallium phosphide
JPS54153785A (en) Preparing method of medium resistivity asga single crystal
JPS57155956A (en) Jelly stuffed with liquid ingredient and its making method