JPS56111192A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS56111192A JPS56111192A JP1386280A JP1386280A JPS56111192A JP S56111192 A JPS56111192 A JP S56111192A JP 1386280 A JP1386280 A JP 1386280A JP 1386280 A JP1386280 A JP 1386280A JP S56111192 A JPS56111192 A JP S56111192A
- Authority
- JP
- Japan
- Prior art keywords
- rom1
- interval
- wirings
- storage device
- igfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Abstract
PURPOSE:To establish the semiconductor storage device possible for high speed operation and smalls-sized chip, by introducing the specified signal line of ROMs alternately from the opposing direction provided with IGFETs in XY matrix arrangement. CONSTITUTION:The signal output lines X0, X1... from X decoders 3a, 3b to the row of IGFETs 2... in matrix arrangement forming a ROM1 are introduced to ROM1 from the direction opposing left and right alternately, and the interval L between rows adjacent of common parts 80... having broader wdith duplicated with the metallic wirings 60 being the gate wirings of ROM1 and with the diffusion wirings 50..., is greater than the case of introduction from the same direction of the output lines X0.... Thus, even with decreased interval l between the wirings 60..., the interval L is more than the minimum interval, allowing to reduce the chip size and the capacity of each FET in the ROM1, resulting that the time constant at electric charge discharge is small. Thus the storage device with high speed operation can be made.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55013862A JPS5840342B2 (en) | 1980-02-07 | 1980-02-07 | semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55013862A JPS5840342B2 (en) | 1980-02-07 | 1980-02-07 | semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56111192A true JPS56111192A (en) | 1981-09-02 |
JPS5840342B2 JPS5840342B2 (en) | 1983-09-05 |
Family
ID=11845062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55013862A Expired JPS5840342B2 (en) | 1980-02-07 | 1980-02-07 | semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5840342B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60135256U (en) * | 1984-02-21 | 1985-09-09 | 村田機械株式会社 | Goods transport trolley |
-
1980
- 1980-02-07 JP JP55013862A patent/JPS5840342B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5840342B2 (en) | 1983-09-05 |
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