JPS56110287A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS56110287A
JPS56110287A JP1316180A JP1316180A JPS56110287A JP S56110287 A JPS56110287 A JP S56110287A JP 1316180 A JP1316180 A JP 1316180A JP 1316180 A JP1316180 A JP 1316180A JP S56110287 A JPS56110287 A JP S56110287A
Authority
JP
Japan
Prior art keywords
laser element
base
light
facing
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1316180A
Other languages
Japanese (ja)
Other versions
JPS616558B2 (en
Inventor
Takashi Sugino
Masaru Wada
Yuichi Shimizu
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1316180A priority Critical patent/JPS56110287A/en
Publication of JPS56110287A publication Critical patent/JPS56110287A/en
Publication of JPS616558B2 publication Critical patent/JPS616558B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent disturbance of a mode, monitor a light and fetch a single by forming a V-shaped groove in the stepped part of a base having a lower flat part where a laser element is fixed and giving a light reflective property to an inclined face opposed to a laser element facing. CONSTITUTION:A V-shaped groove is formed on the stepped part of a base-having a lower flat part where a laser element is fixed, and a light reflection property is given to an inclined part to the facing of a laser element. For instance, a stepped part 8 is provided on a base consisting of a semiconductor to form a V-shaped groove 13. On the upper flat part of the front of the base 8 split in half by the groove part 13, a semiconductor layer 9 of other electroconductive type is formed and on the lower flat part, a semiconductor element 16 is fixed. On the inclined part opposed to the facing of a laser element in the groove part 13, a thin insulation film 14 and a thin metal film 15 are formed. Under this constitution, it is possible to prevent disturbance of a mode and obtain a laser device capable of monitoring a light and fetching a signal.
JP1316180A 1980-02-05 1980-02-05 Semiconductor laser device Granted JPS56110287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1316180A JPS56110287A (en) 1980-02-05 1980-02-05 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1316180A JPS56110287A (en) 1980-02-05 1980-02-05 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS56110287A true JPS56110287A (en) 1981-09-01
JPS616558B2 JPS616558B2 (en) 1986-02-27

Family

ID=11825440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1316180A Granted JPS56110287A (en) 1980-02-05 1980-02-05 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS56110287A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203692A (en) * 1985-03-07 1986-09-09 Sony Corp Manufacture of semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203692A (en) * 1985-03-07 1986-09-09 Sony Corp Manufacture of semiconductor laser device

Also Published As

Publication number Publication date
JPS616558B2 (en) 1986-02-27

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