JPS56105394A - Read-only memory read circuit - Google Patents

Read-only memory read circuit

Info

Publication number
JPS56105394A
JPS56105394A JP656280A JP656280A JPS56105394A JP S56105394 A JPS56105394 A JP S56105394A JP 656280 A JP656280 A JP 656280A JP 656280 A JP656280 A JP 656280A JP S56105394 A JPS56105394 A JP S56105394A
Authority
JP
Japan
Prior art keywords
transistor
capacity
line
read
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP656280A
Other languages
Japanese (ja)
Inventor
Hideyuki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP656280A priority Critical patent/JPS56105394A/en
Publication of JPS56105394A publication Critical patent/JPS56105394A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To obtain the ROM read circuit where the charging speed is high, by providing the read line with a capacity separating transistor. CONSTITUTION:Capacity separating transistors 9 are provided on ROM read lines 3...; and if ROM memory transistor TR4 does not exist at the intersection between X and Y address decoders 2 and 6 and memory contents are 1, capacity 8 of line 3 is charged, and the level of line 3 is changed to the high level, and transistor 9 is turned off by the back gate effect. Then, minute parasitic capacity 10 is separated from capacity 8, and sense circuit input 13 is charged rapidly by high-resistance load transistor 11. Meanwhile, if transistor 4 exists at the intersection between decoders 2 and 6, the L level of line 3 rises hardly and charging is performed in a high speed because the resistance of transistor 11 is high, and thus, the ROM read circuit of a high charging speed is obtained to shorten the access time.
JP656280A 1980-01-21 1980-01-21 Read-only memory read circuit Pending JPS56105394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP656280A JPS56105394A (en) 1980-01-21 1980-01-21 Read-only memory read circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP656280A JPS56105394A (en) 1980-01-21 1980-01-21 Read-only memory read circuit

Publications (1)

Publication Number Publication Date
JPS56105394A true JPS56105394A (en) 1981-08-21

Family

ID=11641762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP656280A Pending JPS56105394A (en) 1980-01-21 1980-01-21 Read-only memory read circuit

Country Status (1)

Country Link
JP (1) JPS56105394A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439697A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier circuit
JPS61294699A (en) * 1985-06-20 1986-12-25 Mitsubishi Electric Corp Cmos transistor circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439697A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier circuit
JPS61294699A (en) * 1985-06-20 1986-12-25 Mitsubishi Electric Corp Cmos transistor circuit
US4899066A (en) * 1985-06-20 1990-02-06 Mitsubishi Denki Kabushiki Kaisha OR-type CMOS logic circuit with fast precharging

Similar Documents

Publication Publication Date Title
JPS5694838A (en) Driving circuit
JPS5641579A (en) Address selector
JPS5792482A (en) Static semiconductor storage device
JPS56143587A (en) Static type memory circuit
JPS56105394A (en) Read-only memory read circuit
JPS5693178A (en) Semiconductor memory device
JPS55132589A (en) Semiconductor memory unit
JPS54107638A (en) Memory data readout circuit in semiconductor memory unit
JPS5577088A (en) Nonvolatile semiconductor memory unit
JPS55101185A (en) Semiconductor memory device
JPS56164631A (en) Signal line precharging circuit
JPS62188097A (en) Semiconductor memory circuit
JPS5683886A (en) Semiconductor storage device
JPS56114193A (en) Semiconductor memory device
JPS5753887A (en) Sense amplifying circuit of semiconductor memory
JPS5647988A (en) Semiconductor memory device
JPS5718086A (en) Read only memory
JPS57158086A (en) Semiconductor memory device
JPS57105892A (en) Rewritable non-volatile semiconductor storage device
JPS5758299A (en) Read only memory circuit
JPS5767333A (en) Mos integrated circuit
JPS5577091A (en) Read-only memory circuit
JPS57138091A (en) Peripheral circuit system for non-volatile insulation gate semiconductor memory
JPS5730190A (en) Semiconductor storage device
JPS5542361A (en) Fan-out circuit