JPS56100489A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS56100489A
JPS56100489A JP277780A JP277780A JPS56100489A JP S56100489 A JPS56100489 A JP S56100489A JP 277780 A JP277780 A JP 277780A JP 277780 A JP277780 A JP 277780A JP S56100489 A JPS56100489 A JP S56100489A
Authority
JP
Japan
Prior art keywords
layer
type
difference
level
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP277780A
Other languages
Japanese (ja)
Inventor
Kunio Ito
Takashi Sugino
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP277780A priority Critical patent/JPS56100489A/en
Priority to US06/224,821 priority patent/US4392227A/en
Priority to CA000368427A priority patent/CA1154852A/en
Priority to DE8181100192T priority patent/DE3171754D1/en
Priority to EP81100192A priority patent/EP0032401B1/en
Publication of JPS56100489A publication Critical patent/JPS56100489A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Abstract

PURPOSE:To obtain stable oscillation of a basic mode by preparing the laser device with provision of the 1st clad layer, an active layer and the 2nd clad layer wherein specific resistance is specified on the surface of a semiconductor substrate having a difference in level on the surface thereof. CONSTITUTION:On the surface of the N type GaAs substrate 8 is formed a difference in level T, and on the whole surface including the part T are laminated an N type Ga0.7Al0.3As the 1st clad layer 9 and an N type Ga0.95Al0.05As active layer 10, which are made to grow. Further thereon, a P type Ga0.7Al0.3As the 2nd clad layer 11 having the specific resistance exceeding 10<-2>OMEGAcm and a P type GaAs cap layer 12 are piled. At this time, the layers up to the active layer 10 are made to have the difference in level, while the surface of the layer 11 and up is formed to be flat. Next, on the surface of the layer 12 just above the part T a stripe-shaped SiO2 film mask 22 is provided, etching is applied, the layer 12 being exposed is removed to such as extent that the removal is made down to a part of the layer 11. Then, the part thus removed is filled with a GaAs layer 23 of high resistance and thereby the surface is made to be flat. After that, to this place and to the back surface of the substrate 8, electrodes 14 and 15 are fixed respectively.
JP277780A 1980-01-14 1980-01-14 Semiconductor laser device Pending JPS56100489A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP277780A JPS56100489A (en) 1980-01-14 1980-01-14 Semiconductor laser device
US06/224,821 US4392227A (en) 1980-01-14 1981-01-13 Terraced substrate semiconductor laser
CA000368427A CA1154852A (en) 1980-01-14 1981-01-13 Semiconductor laser
DE8181100192T DE3171754D1 (en) 1980-01-14 1981-01-13 Semiconductor laser
EP81100192A EP0032401B1 (en) 1980-01-14 1981-01-13 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP277780A JPS56100489A (en) 1980-01-14 1980-01-14 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS56100489A true JPS56100489A (en) 1981-08-12

Family

ID=11538766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP277780A Pending JPS56100489A (en) 1980-01-14 1980-01-14 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS56100489A (en)

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