JPS56100468A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56100468A
JPS56100468A JP402280A JP402280A JPS56100468A JP S56100468 A JPS56100468 A JP S56100468A JP 402280 A JP402280 A JP 402280A JP 402280 A JP402280 A JP 402280A JP S56100468 A JPS56100468 A JP S56100468A
Authority
JP
Japan
Prior art keywords
regions
region
type
layer
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP402280A
Other languages
Japanese (ja)
Inventor
Yasuo Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP402280A priority Critical patent/JPS56100468A/en
Publication of JPS56100468A publication Critical patent/JPS56100468A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the destruction-proof capacity of a transistor used for a dielectric load circuit including an automobile ignition device by provinding a diode function for protection within a one-chip Darlington transistor. CONSTITUTION:An n<-> type layer 1 is made to grow on an n<+> type semiconductor substrate 2 and these are used as a collector region, while within the layer 1 a p type base region 3 is formed diffusely, and within the region 3 are provided an n<+> type emitter region 4 of the front stage, an n<+> type emitter region 5 of the rear stage and an n<+> type emitter electrode region 10. These regions 4 and 5 are used as emitter regions in the Darlington connection respectively, while on the periphery of the region 3 n<+> type channel stopper regions 6 are formed at some interval between them. In this constitution, on the surface layer part of the layer 1 exposed between the regions 3 and 6, regions 12' having higher n type conductive form than the layer 1 are provided diffusely as new additions. In this way the regions 12' are made to have the function as the diode for protection and the withstand voltage of the Darlington circuit is increased without the outside diode.
JP402280A 1980-01-16 1980-01-16 Semiconductor device Pending JPS56100468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP402280A JPS56100468A (en) 1980-01-16 1980-01-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP402280A JPS56100468A (en) 1980-01-16 1980-01-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56100468A true JPS56100468A (en) 1981-08-12

Family

ID=11573330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP402280A Pending JPS56100468A (en) 1980-01-16 1980-01-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56100468A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222567A (en) * 1982-06-18 1983-12-24 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222567A (en) * 1982-06-18 1983-12-24 Nec Corp Semiconductor device

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