JPS5599772A - Electrostatic induction type thyristor - Google Patents

Electrostatic induction type thyristor

Info

Publication number
JPS5599772A
JPS5599772A JP760979A JP760979A JPS5599772A JP S5599772 A JPS5599772 A JP S5599772A JP 760979 A JP760979 A JP 760979A JP 760979 A JP760979 A JP 760979A JP S5599772 A JPS5599772 A JP S5599772A
Authority
JP
Japan
Prior art keywords
region
type
channel
impurity concentration
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP760979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639386B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP760979A priority Critical patent/JPS5599772A/ja
Priority to US06/018,774 priority patent/US4364072A/en
Priority to DE2910566A priority patent/DE2910566C2/de
Publication of JPS5599772A publication Critical patent/JPS5599772A/ja
Priority to US06/386,313 priority patent/US4504847A/en
Publication of JPS639386B2 publication Critical patent/JPS639386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
JP760979A 1978-03-17 1979-01-24 Electrostatic induction type thyristor Granted JPS5599772A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP760979A JPS5599772A (en) 1979-01-24 1979-01-24 Electrostatic induction type thyristor
US06/018,774 US4364072A (en) 1978-03-17 1979-03-08 Static induction type semiconductor device with multiple doped layers for potential modification
DE2910566A DE2910566C2 (de) 1978-03-17 1979-03-17 Statische Induktionshalbleitervorrichtung
US06/386,313 US4504847A (en) 1978-03-17 1982-06-08 Static induction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP760979A JPS5599772A (en) 1979-01-24 1979-01-24 Electrostatic induction type thyristor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP62059755A Division JPS6372161A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ
JP62059756A Division JPS6372162A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Publications (2)

Publication Number Publication Date
JPS5599772A true JPS5599772A (en) 1980-07-30
JPS639386B2 JPS639386B2 (enrdf_load_stackoverflow) 1988-02-29

Family

ID=11670541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP760979A Granted JPS5599772A (en) 1978-03-17 1979-01-24 Electrostatic induction type thyristor

Country Status (1)

Country Link
JP (1) JPS5599772A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPS60226185A (ja) * 1984-04-25 1985-11-11 Hitachi Ltd 縦型電界効果トランジスタ
US4998149A (en) * 1987-04-14 1991-03-05 Kabushiki Kaisha Toyota Chuo Kenkyusho Static induction type semiconductor device
JPH04355966A (ja) * 1991-01-09 1992-12-09 Toyo Electric Mfg Co Ltd 静電誘導形半導体素子とその製造方法
WO2004084310A1 (de) * 2003-03-19 2004-09-30 Siced Electronics Development Gmbh & Co. Kg Halbleiteraufbau mit hoch dotiertem kanalleitungsgebiet und verfahren zur herstellung eines halbleiteraufbaus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPS60226185A (ja) * 1984-04-25 1985-11-11 Hitachi Ltd 縦型電界効果トランジスタ
US4998149A (en) * 1987-04-14 1991-03-05 Kabushiki Kaisha Toyota Chuo Kenkyusho Static induction type semiconductor device
JPH04355966A (ja) * 1991-01-09 1992-12-09 Toyo Electric Mfg Co Ltd 静電誘導形半導体素子とその製造方法
WO2004084310A1 (de) * 2003-03-19 2004-09-30 Siced Electronics Development Gmbh & Co. Kg Halbleiteraufbau mit hoch dotiertem kanalleitungsgebiet und verfahren zur herstellung eines halbleiteraufbaus
US7615802B2 (en) 2003-03-19 2009-11-10 Siced Electronics Development Gmbh & Co. Kg Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

Also Published As

Publication number Publication date
JPS639386B2 (enrdf_load_stackoverflow) 1988-02-29

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