JPS5593272A - Electrostatic induction type transistor - Google Patents

Electrostatic induction type transistor

Info

Publication number
JPS5593272A
JPS5593272A JP47379A JP47379A JPS5593272A JP S5593272 A JPS5593272 A JP S5593272A JP 47379 A JP47379 A JP 47379A JP 47379 A JP47379 A JP 47379A JP S5593272 A JPS5593272 A JP S5593272A
Authority
JP
Japan
Prior art keywords
gate
region
source region
layer
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641944B2 (enrdf_load_html_response
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP47379A priority Critical patent/JPS5593272A/ja
Publication of JPS5593272A publication Critical patent/JPS5593272A/ja
Publication of JPS641944B2 publication Critical patent/JPS641944B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP47379A 1979-01-04 1979-01-04 Electrostatic induction type transistor Granted JPS5593272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP47379A JPS5593272A (en) 1979-01-04 1979-01-04 Electrostatic induction type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47379A JPS5593272A (en) 1979-01-04 1979-01-04 Electrostatic induction type transistor

Publications (2)

Publication Number Publication Date
JPS5593272A true JPS5593272A (en) 1980-07-15
JPS641944B2 JPS641944B2 (enrdf_load_html_response) 1989-01-13

Family

ID=11474749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47379A Granted JPS5593272A (en) 1979-01-04 1979-01-04 Electrostatic induction type transistor

Country Status (1)

Country Link
JP (1) JPS5593272A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119365U (enrdf_load_html_response) * 1985-01-14 1986-07-28
JP2013201190A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 接合形電界効果トランジスタ及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119365U (enrdf_load_html_response) * 1985-01-14 1986-07-28
JP2013201190A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 接合形電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPS641944B2 (enrdf_load_html_response) 1989-01-13

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