JPS5585074A - Control of dispersive quantity of metal fine grain - Google Patents

Control of dispersive quantity of metal fine grain

Info

Publication number
JPS5585074A
JPS5585074A JP16050278A JP16050278A JPS5585074A JP S5585074 A JPS5585074 A JP S5585074A JP 16050278 A JP16050278 A JP 16050278A JP 16050278 A JP16050278 A JP 16050278A JP S5585074 A JPS5585074 A JP S5585074A
Authority
JP
Japan
Prior art keywords
target
laser beam
metal
control
dispersive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16050278A
Other languages
Japanese (ja)
Inventor
Tatsuo Fuji
Noboru Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16050278A priority Critical patent/JPS5585074A/en
Publication of JPS5585074A publication Critical patent/JPS5585074A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To control the quantity of generated metal vapor and accurately and strictly control a dispersive quantity per substrate wafer by irradiating laser beam pulses at a target and controlling an energy volume of laser beam pulse.
CONSTITUTION: A plurarity of substrate wafers to disperse ultrafine grains of metal 3 inside a vacuum tank are sequentially installed opposed to each metal target. Each time each substrate wafer is placed opposed to a target, laser beam pulses are irradiated on a target, causing metal vapor to be generated. At the same time, a metal vapor generation volume, i.e. a quantity of ultrafine metal grains adhering to each substrate wafer, is controlled by restricting a pulse width of laser beam, a peak energy value or a number.
COPYRIGHT: (C)1980,JPO&Japio
JP16050278A 1978-12-20 1978-12-20 Control of dispersive quantity of metal fine grain Pending JPS5585074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16050278A JPS5585074A (en) 1978-12-20 1978-12-20 Control of dispersive quantity of metal fine grain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16050278A JPS5585074A (en) 1978-12-20 1978-12-20 Control of dispersive quantity of metal fine grain

Publications (1)

Publication Number Publication Date
JPS5585074A true JPS5585074A (en) 1980-06-26

Family

ID=15716318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16050278A Pending JPS5585074A (en) 1978-12-20 1978-12-20 Control of dispersive quantity of metal fine grain

Country Status (1)

Country Link
JP (1) JPS5585074A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04232258A (en) * 1990-07-18 1992-08-20 Deutsche Forsch & Vers Luft Raumfahrt Ev Formation of layer on substrate using pulsed laser beam
JP2002222875A (en) * 2001-01-25 2002-08-09 Sony Corp Non-volatile semiconductor memory device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04232258A (en) * 1990-07-18 1992-08-20 Deutsche Forsch & Vers Luft Raumfahrt Ev Formation of layer on substrate using pulsed laser beam
JP2002222875A (en) * 2001-01-25 2002-08-09 Sony Corp Non-volatile semiconductor memory device and method of manufacturing the same

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