JPS57143864A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57143864A
JPS57143864A JP56027767A JP2776781A JPS57143864A JP S57143864 A JPS57143864 A JP S57143864A JP 56027767 A JP56027767 A JP 56027767A JP 2776781 A JP2776781 A JP 2776781A JP S57143864 A JPS57143864 A JP S57143864A
Authority
JP
Japan
Prior art keywords
evaporated
evaporating source
beams
wiring
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56027767A
Other languages
Japanese (ja)
Other versions
JPS6220715B2 (en
Inventor
Noriaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56027767A priority Critical patent/JPS57143864A/en
Publication of JPS57143864A publication Critical patent/JPS57143864A/en
Publication of JPS6220715B2 publication Critical patent/JPS6220715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To prevent the emission of alpha rays, and to obtain the IC, which causes no soft error and operates at high speed, by using a high melting-point metal containing Pb at the rate of a specified range or its silicide as the gate electrode or conducting wiring of the IC. CONSTITUTION:An Mo evaporating source 2 and a Pb evaporating source 3 are mounted into a vacuum vessel 1, Mo is evaporated by irradiating beams to the Mo evaporating source 2 from an electron gun 4 and Pb is evaporated by irradiating the quantity of electron beams of one twentieth of the beams of the gun 4 to the Pb evaporating source 3 from an electron gun 5, and Mo containing not more than 5% Pb is evaporated onto an Si substrate 6 to be evaporated for a gate electrode or wiring. Accordingly, the IC which causes no soft error and operates at high speed, can be obtained because the gate film or wiring, which has low resistance and inhibits the emission of alpha rays, can be formed.
JP56027767A 1981-02-27 1981-02-27 Semiconductor device Granted JPS57143864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56027767A JPS57143864A (en) 1981-02-27 1981-02-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027767A JPS57143864A (en) 1981-02-27 1981-02-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57143864A true JPS57143864A (en) 1982-09-06
JPS6220715B2 JPS6220715B2 (en) 1987-05-08

Family

ID=12230133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027767A Granted JPS57143864A (en) 1981-02-27 1981-02-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57143864A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7474045B2 (en) 2002-05-17 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device having TFT with radiation-absorbing film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7474045B2 (en) 2002-05-17 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device having TFT with radiation-absorbing film

Also Published As

Publication number Publication date
JPS6220715B2 (en) 1987-05-08

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