JPS5580314A - Manufacture of silicon semiconductor device - Google Patents
Manufacture of silicon semiconductor deviceInfo
- Publication number
- JPS5580314A JPS5580314A JP15307378A JP15307378A JPS5580314A JP S5580314 A JPS5580314 A JP S5580314A JP 15307378 A JP15307378 A JP 15307378A JP 15307378 A JP15307378 A JP 15307378A JP S5580314 A JPS5580314 A JP S5580314A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- films
- deposited
- diffused
- yielded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To prevent abnormal diffusion and to avoid deterioration of an SiO2 film which is provided on an Si substrate, by selectively depositing an Al diffused layer on the surface of the Si substrate, diffusing Al into the substrate by heat treatment, in a diffused atmosphere comtaining oxygen and free chlorine atoms.
CONSTITUTION: Photoresist films 2 with a specified pattern are deposited on upper and bottom surfaces of an n-type Si substrate 1, and etching is made, thereby a plurality of recesses 3 are formed in the substrate 1. Then, Al is deposited on the upper and lower surfaces of the substrate 1 by a vacuum evaporation method employing Al wire whose purity is 99.9995%, with the surfaces of the films 4 and the bottoms of the recesses 3 being separated. The films 2 and the films 4 which are deposited on the films 2, are removed. Then, Al in the films 4 is diffused by heat treatment in a mixed gas comprising 10% of oxygen including 1% of hydrogen- chloride gas and 90% of nitrogen, thereby a p-type separating regions 5 piercing the substrate 1 is formed. AT the same time, a diffusing-source remnants 6 are yielded on the surfaces of the regions 5, and SiO2 films 7 are yielded on the upper and bottom surfaces of the substrate. In this method, deterioration in film quality due to crystallization is not caused in the films 7.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53153073A JPS5919461B2 (en) | 1978-12-13 | 1978-12-13 | Method for manufacturing silicon semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53153073A JPS5919461B2 (en) | 1978-12-13 | 1978-12-13 | Method for manufacturing silicon semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5580314A true JPS5580314A (en) | 1980-06-17 |
JPS5919461B2 JPS5919461B2 (en) | 1984-05-07 |
Family
ID=15554380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53153073A Expired JPS5919461B2 (en) | 1978-12-13 | 1978-12-13 | Method for manufacturing silicon semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5919461B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4542020A (en) * | 1984-08-17 | 1985-09-17 | E. R. Squibb & Sons, Inc. | Long-lasting adhesive antifungal suppositories |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5057776A (en) * | 1973-09-17 | 1975-05-20 |
-
1978
- 1978-12-13 JP JP53153073A patent/JPS5919461B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5057776A (en) * | 1973-09-17 | 1975-05-20 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4542020A (en) * | 1984-08-17 | 1985-09-17 | E. R. Squibb & Sons, Inc. | Long-lasting adhesive antifungal suppositories |
Also Published As
Publication number | Publication date |
---|---|
JPS5919461B2 (en) | 1984-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3425879A (en) | Method of making shaped epitaxial deposits | |
US3370995A (en) | Method for fabricating electrically isolated semiconductor devices in integrated circuits | |
JPS5467778A (en) | Production of semiconductor device | |
US3746587A (en) | Method of making semiconductor diodes | |
JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
US3451867A (en) | Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer | |
US3471922A (en) | Monolithic integrated circuitry with dielectric isolated functional regions | |
JPS5580314A (en) | Manufacture of silicon semiconductor device | |
EP0206445A2 (en) | Process for forming a semiconductor cell in a silicon semiconductor body and a mixed CMOS/bipolar integrated circuit formed in a plurality of such cells | |
US3681155A (en) | Aluminum diffusions | |
JPS5683046A (en) | Manufacture of integrated circuit | |
JPS5654049A (en) | Semiconductor device | |
JPS5461489A (en) | Manufacture for semiconductor device | |
US4099997A (en) | Method of fabricating a semiconductor device | |
JPS5513957A (en) | Semiconductor device | |
JPS54158887A (en) | Manufacture of semiconductor device | |
JPS54128268A (en) | Multi-diffusion method of impurity | |
JPS57143862A (en) | Manufacture of semiconductor integrated circuit | |
JPS57115822A (en) | Manufacture of semiconductor device | |
JPH049371B2 (en) | ||
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS57143841A (en) | Insulation separating composition | |
JPS5522835A (en) | Manufacturing of transistor | |
JPS54111759A (en) | Liquid epitaxial growing method and its device | |
JPS5578571A (en) | Manufacture of semiconductor device |