JPS5579035A - Forming method of grown film - Google Patents

Forming method of grown film

Info

Publication number
JPS5579035A
JPS5579035A JP15264678A JP15264678A JPS5579035A JP S5579035 A JPS5579035 A JP S5579035A JP 15264678 A JP15264678 A JP 15264678A JP 15264678 A JP15264678 A JP 15264678A JP S5579035 A JPS5579035 A JP S5579035A
Authority
JP
Japan
Prior art keywords
grown film
depression
substrate
pattern
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15264678A
Other languages
Japanese (ja)
Inventor
Yoshifumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP15264678A priority Critical patent/JPS5579035A/en
Publication of JPS5579035A publication Critical patent/JPS5579035A/en
Pending legal-status Critical Current

Links

Landscapes

  • Audible-Bandwidth Dynamoelectric Transducers Other Than Pickups (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE: To provide a grown film having a high dimensional precision useful for fabricating cartridge coil, etc. by a method wherein a grown film is formed on the surface of a substrate having a required pattern depression, then polishing is performed from the surface side of the grown film to leave the grown film pattern in the depression, and the substrate is removed.
CONSTITUTION: A required pattern depression 2 is formed on the surface of a substrate 1 which is easy to be processed by acid etching or electric discharge machining, such as Fe-Ni base alloy. The depression is normally of the depth D less than 0.1mm. The substrate 1 surface is coated with a grown film 3 of required material such as TiC, TiN, SiC, etc. by use of vacuum deposition or sputtering method, etc. unit film thickness becomes sufficiently thick as compared with the depth D of the pattern depression. Then, plane polishing is performed from the surface side of the grown film 3 until the grown film reaches the thickness D" in the pattern depression 2. Removing the substrate 1 by acid etching provides a grown film 3' having the required pattern and thickness D".
COPYRIGHT: (C)1980,JPO&Japio
JP15264678A 1978-12-12 1978-12-12 Forming method of grown film Pending JPS5579035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15264678A JPS5579035A (en) 1978-12-12 1978-12-12 Forming method of grown film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15264678A JPS5579035A (en) 1978-12-12 1978-12-12 Forming method of grown film

Publications (1)

Publication Number Publication Date
JPS5579035A true JPS5579035A (en) 1980-06-14

Family

ID=15544954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15264678A Pending JPS5579035A (en) 1978-12-12 1978-12-12 Forming method of grown film

Country Status (1)

Country Link
JP (1) JPS5579035A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01288198A (en) * 1988-05-16 1989-11-20 Sony Corp Speaker

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01288198A (en) * 1988-05-16 1989-11-20 Sony Corp Speaker

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