JPS5578629A - Overvoltage reduction circuit for semiconductor switch - Google Patents

Overvoltage reduction circuit for semiconductor switch

Info

Publication number
JPS5578629A
JPS5578629A JP15217178A JP15217178A JPS5578629A JP S5578629 A JPS5578629 A JP S5578629A JP 15217178 A JP15217178 A JP 15217178A JP 15217178 A JP15217178 A JP 15217178A JP S5578629 A JPS5578629 A JP S5578629A
Authority
JP
Japan
Prior art keywords
thyristor
resistor
overvoltage
semiconductor switch
current flows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15217178A
Other languages
Japanese (ja)
Other versions
JPS5922415B2 (en
Inventor
Tadao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP15217178A priority Critical patent/JPS5922415B2/en
Publication of JPS5578629A publication Critical patent/JPS5578629A/en
Publication of JPS5922415B2 publication Critical patent/JPS5922415B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To secure the complete reduction for the overvoltage energy by providing plural units of the serial circuit consisting of the thyristor and the nonlinear resistor in parallel to the semiconductor switch and then securing the difference of the limit voltage characteristics between the nonlinear resistors. CONSTITUTION:If the limit voltage is set to V1-V3 for nonlinear resistors R1-R3 functioning as the overvoltage reduction elements, V1>V2>V3 is secured. And now if semiconductor switch 1 is opened, the overvoltage is applied across switch 1. When this voltage reaches near the allowable dielectric strength level, the gate signal is sent to thyristor S1 for ignition. As a result, the overcurrent can be reduced less than the prescribed level. And when the power loss of resistor R1 reaches the allowable absorption loss, the ignition is given to thyristor S2. And the current flows to all serial circuits 12 of resistor R2, thus S1 being turned off. After this and in the same way, the current flows to serial circuit 13 of thyristor S3 and resistor R3 to turn off S2. In such way, the current flows to resistors R1, R2 and R3 in sequence, and thus the overcurrent can be absorbed in the good state of allotment.
JP15217178A 1978-12-08 1978-12-08 Overvoltage suppression circuit for semiconductor switches Expired JPS5922415B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15217178A JPS5922415B2 (en) 1978-12-08 1978-12-08 Overvoltage suppression circuit for semiconductor switches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15217178A JPS5922415B2 (en) 1978-12-08 1978-12-08 Overvoltage suppression circuit for semiconductor switches

Publications (2)

Publication Number Publication Date
JPS5578629A true JPS5578629A (en) 1980-06-13
JPS5922415B2 JPS5922415B2 (en) 1984-05-26

Family

ID=15534581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15217178A Expired JPS5922415B2 (en) 1978-12-08 1978-12-08 Overvoltage suppression circuit for semiconductor switches

Country Status (1)

Country Link
JP (1) JPS5922415B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6131451U (en) * 1984-07-30 1986-02-25 エステ−化学株式会社 air freshener container

Also Published As

Publication number Publication date
JPS5922415B2 (en) 1984-05-26

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