JPS556821A - Photo detecting apparatus - Google Patents
Photo detecting apparatusInfo
- Publication number
- JPS556821A JPS556821A JP7854178A JP7854178A JPS556821A JP S556821 A JPS556821 A JP S556821A JP 7854178 A JP7854178 A JP 7854178A JP 7854178 A JP7854178 A JP 7854178A JP S556821 A JPS556821 A JP S556821A
- Authority
- JP
- Japan
- Prior art keywords
- silicone
- photogate
- film
- oxide film
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001296 polysiloxane Polymers 0.000 abstract 4
- 230000035945 sensitivity Effects 0.000 abstract 3
- 230000003595 spectral effect Effects 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920006268 silicone film Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To increase the sensitivity in the short wave length while making the spectral sensitivity even by making the photogate thinner in a photo detecting device with a polycrystal silicone as an electrode. CONSTITUTION:A silicone oxide film 2 is formed on a smiconductor substrate 1 and provided thereon with a photogate 4 made of a polycrystal silicone and made conductive with the dope of phosphorus, a CCD electrode (charge bonding element) 5, and a photo transfer gate 6. Additionally provided are a polycrystal silicone oxide film 7 for electrically insulating respective electrodes, an CVD oxide film or a PSG film 8 and a light shielding film 9 with a light receiving window. Particularly in the formation of the polycrystal silicone film, the portion of the photogate is made thin to about 1,000Angstrom . With such an arrangement, the light absorption is minimized in the zone of short wave length while multiple reflection is hard to occur thereby uniformizing the spectral sensitivity characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7854178A JPS556821A (en) | 1978-06-30 | 1978-06-30 | Photo detecting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7854178A JPS556821A (en) | 1978-06-30 | 1978-06-30 | Photo detecting apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS556821A true JPS556821A (en) | 1980-01-18 |
Family
ID=13664762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7854178A Pending JPS556821A (en) | 1978-06-30 | 1978-06-30 | Photo detecting apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS556821A (en) |
-
1978
- 1978-06-30 JP JP7854178A patent/JPS556821A/en active Pending
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