JPS556813A - Crystal rating method of semiconductor surface layer - Google Patents
Crystal rating method of semiconductor surface layerInfo
- Publication number
- JPS556813A JPS556813A JP7833678A JP7833678A JPS556813A JP S556813 A JPS556813 A JP S556813A JP 7833678 A JP7833678 A JP 7833678A JP 7833678 A JP7833678 A JP 7833678A JP S556813 A JPS556813 A JP S556813A
- Authority
- JP
- Japan
- Prior art keywords
- signal component
- light
- surface layer
- crystal
- reflected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To accomplish a crystal rating with a high accuracy by measuring the reflection factor only for the semiconductor surface layer based on the differential component of the wave length corresponding to the factor extracted from the light reflected from the surface layer.
CONSTITUTION: A light (output Io) whose wave length changes cyclically without line spectrum is divided into two. One light divided is irradiated on a test piece of a silicone semiconductor 12 to extract a AC signal component and a DC signal component from the light reflected from the surface layer, while an AC signal component and a DC signal component of the light source are extracted from the other light. Then, the DC signal component of the reflected light is divided by the DC signal component of the light source to determine a reflection factor R. The results are multiplied by the AC signal component and then, the computed value is subtracted from the AC signal component of the reflected sight. In this manner, a crystal rating of the surface layer is conducted based on a characteristic diagram of wave length differentiation spectrum.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7833678A JPS556813A (en) | 1978-06-28 | 1978-06-28 | Crystal rating method of semiconductor surface layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7833678A JPS556813A (en) | 1978-06-28 | 1978-06-28 | Crystal rating method of semiconductor surface layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS556813A true JPS556813A (en) | 1980-01-18 |
Family
ID=13659125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7833678A Pending JPS556813A (en) | 1978-06-28 | 1978-06-28 | Crystal rating method of semiconductor surface layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS556813A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63142628U (en) * | 1987-03-10 | 1988-09-20 |
-
1978
- 1978-06-28 JP JP7833678A patent/JPS556813A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63142628U (en) * | 1987-03-10 | 1988-09-20 |
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