JPS556813A - Crystal rating method of semiconductor surface layer - Google Patents

Crystal rating method of semiconductor surface layer

Info

Publication number
JPS556813A
JPS556813A JP7833678A JP7833678A JPS556813A JP S556813 A JPS556813 A JP S556813A JP 7833678 A JP7833678 A JP 7833678A JP 7833678 A JP7833678 A JP 7833678A JP S556813 A JPS556813 A JP S556813A
Authority
JP
Japan
Prior art keywords
signal component
light
surface layer
crystal
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7833678A
Other languages
Japanese (ja)
Inventor
Kenji Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7833678A priority Critical patent/JPS556813A/en
Publication of JPS556813A publication Critical patent/JPS556813A/en
Pending legal-status Critical Current

Links

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  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To accomplish a crystal rating with a high accuracy by measuring the reflection factor only for the semiconductor surface layer based on the differential component of the wave length corresponding to the factor extracted from the light reflected from the surface layer.
CONSTITUTION: A light (output Io) whose wave length changes cyclically without line spectrum is divided into two. One light divided is irradiated on a test piece of a silicone semiconductor 12 to extract a AC signal component and a DC signal component from the light reflected from the surface layer, while an AC signal component and a DC signal component of the light source are extracted from the other light. Then, the DC signal component of the reflected light is divided by the DC signal component of the light source to determine a reflection factor R. The results are multiplied by the AC signal component and then, the computed value is subtracted from the AC signal component of the reflected sight. In this manner, a crystal rating of the surface layer is conducted based on a characteristic diagram of wave length differentiation spectrum.
COPYRIGHT: (C)1980,JPO&Japio
JP7833678A 1978-06-28 1978-06-28 Crystal rating method of semiconductor surface layer Pending JPS556813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7833678A JPS556813A (en) 1978-06-28 1978-06-28 Crystal rating method of semiconductor surface layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7833678A JPS556813A (en) 1978-06-28 1978-06-28 Crystal rating method of semiconductor surface layer

Publications (1)

Publication Number Publication Date
JPS556813A true JPS556813A (en) 1980-01-18

Family

ID=13659125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7833678A Pending JPS556813A (en) 1978-06-28 1978-06-28 Crystal rating method of semiconductor surface layer

Country Status (1)

Country Link
JP (1) JPS556813A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142628U (en) * 1987-03-10 1988-09-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142628U (en) * 1987-03-10 1988-09-20

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