JPS5558576A - Mis structure semiconductor device - Google Patents

Mis structure semiconductor device

Info

Publication number
JPS5558576A
JPS5558576A JP13191078A JP13191078A JPS5558576A JP S5558576 A JPS5558576 A JP S5558576A JP 13191078 A JP13191078 A JP 13191078A JP 13191078 A JP13191078 A JP 13191078A JP S5558576 A JPS5558576 A JP S5558576A
Authority
JP
Japan
Prior art keywords
boundary
layers
electrons
epitaxial growth
induced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13191078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142875B2 (enrdf_load_stackoverflow
Inventor
Fumio Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13191078A priority Critical patent/JPS5558576A/ja
Publication of JPS5558576A publication Critical patent/JPS5558576A/ja
Publication of JPS6142875B2 publication Critical patent/JPS6142875B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
JP13191078A 1978-10-26 1978-10-26 Mis structure semiconductor device Granted JPS5558576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13191078A JPS5558576A (en) 1978-10-26 1978-10-26 Mis structure semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13191078A JPS5558576A (en) 1978-10-26 1978-10-26 Mis structure semiconductor device

Publications (2)

Publication Number Publication Date
JPS5558576A true JPS5558576A (en) 1980-05-01
JPS6142875B2 JPS6142875B2 (enrdf_load_stackoverflow) 1986-09-24

Family

ID=15069029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13191078A Granted JPS5558576A (en) 1978-10-26 1978-10-26 Mis structure semiconductor device

Country Status (1)

Country Link
JP (1) JPS5558576A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771182A (en) * 1980-08-20 1982-05-01 Thomson Csf Gallium arsenide field effect transistor with non-volatile memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771182A (en) * 1980-08-20 1982-05-01 Thomson Csf Gallium arsenide field effect transistor with non-volatile memory

Also Published As

Publication number Publication date
JPS6142875B2 (enrdf_load_stackoverflow) 1986-09-24

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