JPS5552587A - Static semiconductor memory circuit - Google Patents

Static semiconductor memory circuit

Info

Publication number
JPS5552587A
JPS5552587A JP12261778A JP12261778A JPS5552587A JP S5552587 A JPS5552587 A JP S5552587A JP 12261778 A JP12261778 A JP 12261778A JP 12261778 A JP12261778 A JP 12261778A JP S5552587 A JPS5552587 A JP S5552587A
Authority
JP
Japan
Prior art keywords
write
circuit
power switches
timing
timing signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12261778A
Other languages
Japanese (ja)
Other versions
JPS615231B2 (en
Inventor
Yoshio Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12261778A priority Critical patent/JPS5552587A/en
Publication of JPS5552587A publication Critical patent/JPS5552587A/en
Publication of JPS615231B2 publication Critical patent/JPS615231B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To shorten write time by controlling power switches of a write control circuit and address buffer circuit at nearly-equal timing. CONSTITUTION:By timing signal PS3 from timing signal generating circuit 10, power switches such as write control signal buffer circuit 6, Y and X address buffer circuits 1a and 1b, and 3a and 3b are controlled at nearyl-equal timing and power switches of Y and X address decoders 2 and 4 connected to memory matrix 5 are controlled by slow timing signal PS5 generated by circuit 10. Therefore, when a fixed memory cell is selected by circuits 2 and 4, write operation by previously- determined write data starts immediately. As a result, write cycles are shorten and write time can be made short.
JP12261778A 1978-10-06 1978-10-06 Static semiconductor memory circuit Granted JPS5552587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12261778A JPS5552587A (en) 1978-10-06 1978-10-06 Static semiconductor memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12261778A JPS5552587A (en) 1978-10-06 1978-10-06 Static semiconductor memory circuit

Publications (2)

Publication Number Publication Date
JPS5552587A true JPS5552587A (en) 1980-04-17
JPS615231B2 JPS615231B2 (en) 1986-02-17

Family

ID=14840380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12261778A Granted JPS5552587A (en) 1978-10-06 1978-10-06 Static semiconductor memory circuit

Country Status (1)

Country Link
JP (1) JPS5552587A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870481A (en) * 1981-10-23 1983-04-26 Oki Electric Ind Co Ltd Semiconductor storing circuit
JPS59124091A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor memory
JPS63291290A (en) * 1987-05-22 1988-11-29 Nec Corp Chip enable circuit
JPH07201181A (en) * 1994-11-29 1995-08-04 Hitachi Ltd Semiconductor memory device
JPH07201180A (en) * 1994-11-29 1995-08-04 Hitachi Ltd Semiconductor memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870481A (en) * 1981-10-23 1983-04-26 Oki Electric Ind Co Ltd Semiconductor storing circuit
JPS59124091A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor memory
JPH047038B2 (en) * 1982-12-29 1992-02-07 Fujitsu Ltd
JPS63291290A (en) * 1987-05-22 1988-11-29 Nec Corp Chip enable circuit
JPH07201181A (en) * 1994-11-29 1995-08-04 Hitachi Ltd Semiconductor memory device
JPH07201180A (en) * 1994-11-29 1995-08-04 Hitachi Ltd Semiconductor memory device

Also Published As

Publication number Publication date
JPS615231B2 (en) 1986-02-17

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