JPS5587384A - Semiconductor memory circuit - Google Patents
Semiconductor memory circuitInfo
- Publication number
- JPS5587384A JPS5587384A JP15747778A JP15747778A JPS5587384A JP S5587384 A JPS5587384 A JP S5587384A JP 15747778 A JP15747778 A JP 15747778A JP 15747778 A JP15747778 A JP 15747778A JP S5587384 A JPS5587384 A JP S5587384A
- Authority
- JP
- Japan
- Prior art keywords
- writing
- delay circuit
- misfetq69
- time
- output timing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
Abstract
PURPOSE:To shorten the writing time by inhibiting the operation of the delay circuit when the writing is carried out. CONSTITUTION:MISFETQ69 to which control signal r/w is applied in parallel plus MISFETQ71 and MISFETQ70 which feature the low levels at the non-set time in series to MISFETQ69 with application of Y address information ay0 featuring the opposite phases to each other at the set time are provided to MISFETQ67 forming delay circuit. And at the writing time, output timing signal YWC of the Y address decoder is delivered at the moment when the Y address information is set regardless of the output timing signal XWC of the X address decoder and the operation of the delay circuit. As a result, the writing action cycle can be shortened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15747778A JPS5587384A (en) | 1978-12-22 | 1978-12-22 | Semiconductor memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15747778A JPS5587384A (en) | 1978-12-22 | 1978-12-22 | Semiconductor memory circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5587384A true JPS5587384A (en) | 1980-07-02 |
Family
ID=15650529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15747778A Pending JPS5587384A (en) | 1978-12-22 | 1978-12-22 | Semiconductor memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587384A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58220291A (en) * | 1982-06-15 | 1983-12-21 | Nec Corp | Control circuit of signal transmission time |
JPS6442096A (en) * | 1987-08-07 | 1989-02-14 | Fujitsu Ltd | Semiconductor memory |
-
1978
- 1978-12-22 JP JP15747778A patent/JPS5587384A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58220291A (en) * | 1982-06-15 | 1983-12-21 | Nec Corp | Control circuit of signal transmission time |
JPH0237039B2 (en) * | 1982-06-15 | 1990-08-22 | Nippon Electric Co | |
JPS6442096A (en) * | 1987-08-07 | 1989-02-14 | Fujitsu Ltd | Semiconductor memory |
JP2590122B2 (en) * | 1987-08-07 | 1997-03-12 | 富士通株式会社 | Semiconductor memory |
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