JPS5550659A - Flat thyristor - Google Patents

Flat thyristor

Info

Publication number
JPS5550659A
JPS5550659A JP12381878A JP12381878A JPS5550659A JP S5550659 A JPS5550659 A JP S5550659A JP 12381878 A JP12381878 A JP 12381878A JP 12381878 A JP12381878 A JP 12381878A JP S5550659 A JPS5550659 A JP S5550659A
Authority
JP
Japan
Prior art keywords
electrode
lead
gate
thyristor
screw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12381878A
Other languages
Japanese (ja)
Inventor
Koichi Kamahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12381878A priority Critical patent/JPS5550659A/en
Publication of JPS5550659A publication Critical patent/JPS5550659A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To avoid variations of a gate signal in a flat thyristor by providing a movable screw making contact with a gate electrode at the end of a gate lead forming the thyristor to thereby control the deflection amount of the lead to predetermined value using the screw. CONSTITUTION:A silicon wafer 1 having pnpn structure of foru layers is secured onto a molybdenum disk 2, an aluminum gate electrode 4 is provided on the central surface of the wafer 1, and aluminum cathode electrodes 3 are similarly provided at an interval at both sides of the electrode 4 to thus form a flat thyristor. When a gate lead 12 is mounted to the electrode 4, a stationary plate 14 is provided at the end making contact with the electrode 4, of the lead, and engaged with the screw 15. Thus, the lead 12 is strongly urged at the end thereof on the electrode 4 by the elastic force of the lead 12, and when the screw 15 is further rotated, it can control the interval between the stationary plate 14 and the electrode 4. Accordingly, the relative position between the lead 12 and the electrode 4 does not move to occur thereby no variation of the gate signal in the thyristor.
JP12381878A 1978-10-06 1978-10-06 Flat thyristor Pending JPS5550659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12381878A JPS5550659A (en) 1978-10-06 1978-10-06 Flat thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12381878A JPS5550659A (en) 1978-10-06 1978-10-06 Flat thyristor

Publications (1)

Publication Number Publication Date
JPS5550659A true JPS5550659A (en) 1980-04-12

Family

ID=14870097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12381878A Pending JPS5550659A (en) 1978-10-06 1978-10-06 Flat thyristor

Country Status (1)

Country Link
JP (1) JPS5550659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6781227B2 (en) * 2002-01-25 2004-08-24 International Rectifier Corporation Compression assembled electronic package having a plastic molded insulation ring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6781227B2 (en) * 2002-01-25 2004-08-24 International Rectifier Corporation Compression assembled electronic package having a plastic molded insulation ring

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