JPS5548947A - Evaluation of semiconductor integrated circuit - Google Patents

Evaluation of semiconductor integrated circuit

Info

Publication number
JPS5548947A
JPS5548947A JP12302978A JP12302978A JPS5548947A JP S5548947 A JPS5548947 A JP S5548947A JP 12302978 A JP12302978 A JP 12302978A JP 12302978 A JP12302978 A JP 12302978A JP S5548947 A JPS5548947 A JP S5548947A
Authority
JP
Japan
Prior art keywords
cleanliness
degree
good
evaluation
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12302978A
Other languages
Japanese (ja)
Inventor
Minoru Taguchi
Akihiko Furukawa
Hajime Sasaki
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12302978A priority Critical patent/JPS5548947A/en
Publication of JPS5548947A publication Critical patent/JPS5548947A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To make accurate evaluation of manufacturing process, by producing large-capacitance MOS-type capacitors simultaneously in the process of manufacturing ICs, taking them out, electricaly destroying them, and investigating their electric field break-down strength and their distribution.
CONSTITUTION: N-type Si wafers are placed in a production line for unipolar ICs, SiO2 film is grown in a dry O2 atmosphere, and a plurality of MOS capacitors are produced by operating metallization. Next, a time when the degree of cleanliness is good and a time when the degree of cleanliness is bad are picked out and capacitors are taken out and electrically destroyed, and then their breakdown electric field strength distributions are investigated. By this, it is found that the breakdown condition is good as shown by curve 1 in the drawing when the degree of cleanliness is good, but it deteriorates as shown by curve 2 when the degree of cleanliness is bed. Consequently, evaluation is made very simple, and this provides a very effective means for correction and adjustment of each process with respect to control targets.
COPYRIGHT: (C)1980,JPO&Japio
JP12302978A 1978-10-05 1978-10-05 Evaluation of semiconductor integrated circuit Pending JPS5548947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12302978A JPS5548947A (en) 1978-10-05 1978-10-05 Evaluation of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12302978A JPS5548947A (en) 1978-10-05 1978-10-05 Evaluation of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5548947A true JPS5548947A (en) 1980-04-08

Family

ID=14850447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12302978A Pending JPS5548947A (en) 1978-10-05 1978-10-05 Evaluation of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5548947A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62276879A (en) * 1986-05-26 1987-12-01 Fujitsu Ltd Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62276879A (en) * 1986-05-26 1987-12-01 Fujitsu Ltd Semiconductor integrated circuit

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