JPS5544786A - Pressure sensor - Google Patents

Pressure sensor

Info

Publication number
JPS5544786A
JPS5544786A JP11901678A JP11901678A JPS5544786A JP S5544786 A JPS5544786 A JP S5544786A JP 11901678 A JP11901678 A JP 11901678A JP 11901678 A JP11901678 A JP 11901678A JP S5544786 A JPS5544786 A JP S5544786A
Authority
JP
Japan
Prior art keywords
diaphragm
ring
areas
diffusion
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11901678A
Other languages
English (en)
Other versions
JPS6313356B2 (ja
Inventor
Kazuji Yamada
Kiyomitsu Suzuki
Motohisa Nishihara
Hiroji Kawakami
Hideo Sato
Shigeyuki Kobori
Ryosaku Kanzawa
Minoru Takahashi
Hitoshi Minorikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14750893&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5544786(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11901678A priority Critical patent/JPS5544786A/ja
Priority to US06/076,813 priority patent/US4291293A/en
Priority to AU51006/79A priority patent/AU528367B2/en
Priority to DE7979103666T priority patent/DE2965860D1/de
Priority to EP79103666A priority patent/EP0010204B2/en
Priority to CA336,522A priority patent/CA1115857A/en
Publication of JPS5544786A publication Critical patent/JPS5544786A/ja
Publication of JPS6313356B2 publication Critical patent/JPS6313356B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP11901678A 1978-09-27 1978-09-27 Pressure sensor Granted JPS5544786A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP11901678A JPS5544786A (en) 1978-09-27 1978-09-27 Pressure sensor
US06/076,813 US4291293A (en) 1978-09-27 1979-09-19 Semiconductor absolute pressure transducer assembly and method
AU51006/79A AU528367B2 (en) 1978-09-27 1979-09-20 Semiconductor absolute pressure transducer assembly and method
DE7979103666T DE2965860D1 (en) 1978-09-27 1979-09-27 Semiconductor absolute pressure transducer assembly
EP79103666A EP0010204B2 (en) 1978-09-27 1979-09-27 Semiconductor absolute pressure transducer assembly
CA336,522A CA1115857A (en) 1978-09-27 1979-09-27 Semiconductor absolute pressure transducer assembly and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11901678A JPS5544786A (en) 1978-09-27 1978-09-27 Pressure sensor

Publications (2)

Publication Number Publication Date
JPS5544786A true JPS5544786A (en) 1980-03-29
JPS6313356B2 JPS6313356B2 (ja) 1988-03-25

Family

ID=14750893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11901678A Granted JPS5544786A (en) 1978-09-27 1978-09-27 Pressure sensor

Country Status (6)

Country Link
US (1) US4291293A (ja)
EP (1) EP0010204B2 (ja)
JP (1) JPS5544786A (ja)
AU (1) AU528367B2 (ja)
CA (1) CA1115857A (ja)
DE (1) DE2965860D1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427274A (en) * 1987-04-09 1989-01-30 Nippon Denso Co Semiconductor pressure sensor
US5041900A (en) * 1987-08-06 1991-08-20 Hamilton Standard Controls, Inc. Semiconductor device having sealed electrical feedthrough
JP2000065662A (ja) * 1998-08-20 2000-03-03 Unisia Jecs Corp 圧力センサおよびその製造方法

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780532A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor load converter
US4523964A (en) * 1981-02-12 1985-06-18 Becton, Dickinson And Company High temperature layered silicon structures
US4411158A (en) * 1981-04-14 1983-10-25 Ametek, Inc. Apparatus for sensing the condition of a fluid
DE3118366A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Drucksensor
JPS5828876A (ja) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp 半導体圧力センサ装置
US4463336A (en) * 1981-12-28 1984-07-31 United Technologies Corporation Ultra-thin microelectronic pressure sensors
DE3207833A1 (de) * 1982-03-04 1983-09-15 Siemens AG, 1000 Berlin und 8000 München Halbleiter-drucksensor
US4527428A (en) * 1982-12-30 1985-07-09 Hitachi, Ltd. Semiconductor pressure transducer
USRE33518E (en) * 1983-04-29 1991-01-15 Baxter International, Inc. Pressure transducer assembly
HU187896B (en) * 1983-05-05 1986-02-28 Banyaszati Aknamelyitoe Vallalat,Hu Apparatus for determining and indicating the necessary quantity of gas in order to leave a dngerous place in safety, applicable to a basic apparatus with a tank containing gas /oxigen or air/ for people working in dangerous places and with gas feeding organs, applicable preferably to fleeing apparatuses of mining industry
US4545255A (en) * 1984-01-17 1985-10-08 Environmental Control Technology, Inc. Low pressure transducer
DE3583183D1 (de) * 1984-05-09 1991-07-18 Toshiba Kawasaki Kk Verfahren zur herstellung eines halbleitersubstrates.
JPS6341080A (ja) * 1986-08-06 1988-02-22 Nissan Motor Co Ltd 半導体加速度センサ
CA1314410C (en) * 1986-12-08 1993-03-16 Masanori Nishiguchi Wiring structure of semiconductor pressure sensor
JPH0810170B2 (ja) * 1987-03-06 1996-01-31 株式会社日立製作所 半導体絶対圧力センサの製造方法
US4926155A (en) * 1988-12-12 1990-05-15 Johnson Service Company Integrated circuit silicon pressure transducer package
EP0375402B1 (en) * 1988-12-21 1998-03-18 Gte Products Corporation Quartz lamp envelope with molybdenum foil having oxidation-resistant surface formed by ion implantation
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
DE4133991C2 (de) * 1991-10-14 1994-05-05 Rainer Achterholt Ein Drucksignal erzeugende Ventilkappe für einen mit einem Reifenventil ausgerüsteten Luftreifen
DE4133993C2 (de) * 1991-10-14 1994-06-09 Rainer Achterholt Vorrichtung zum Messen und Anzeigen des Druckes in einem Luftreifen
WO1993008036A1 (de) * 1991-10-14 1993-04-29 Rainer Achterholt Verfahren, vorrichtung und ventilkappe zum messen und anzeigen des druckes in einem luftreifen
DE4133999C2 (de) * 1991-10-14 1994-06-09 Rainer Achterholt Ein Drucksignal erzeugendes Reifenventil
WO1993008035A1 (de) * 1991-10-14 1993-04-29 Rainer Achterholt Verfahren, vorrichtung und ventil zum messen und anzeigen des druckes in einem luftreifen
US5581028A (en) * 1994-06-23 1996-12-03 Hewlett Packard Company Fluid property sensors incorporating plated metal rings for improved packaging
JP3383081B2 (ja) 1994-07-12 2003-03-04 三菱電機株式会社 陽極接合法を用いて製造した電子部品及び電子部品の製造方法
US5591679A (en) * 1995-04-12 1997-01-07 Sensonor A/S Sealed cavity arrangement method
US5742222A (en) * 1995-05-26 1998-04-21 Avi Systems, Inc. Direct adhering polysilicon based strain gage
JPH0915074A (ja) * 1995-06-27 1997-01-17 Mitsubishi Electric Corp 半導体圧力検出装置及びその製造方法
US5600071A (en) * 1995-09-05 1997-02-04 Motorola, Inc. Vertically integrated sensor structure and method
DE19800574B4 (de) * 1998-01-09 2013-11-14 Robert Bosch Gmbh Mikromechanisches Bauelement
US6951797B1 (en) 1999-10-19 2005-10-04 Imego Ab Method relating to anodic bonding
AU1183101A (en) * 1999-10-19 2001-04-30 Imego Ab Method relating to anodic bonding
US6612175B1 (en) * 2000-07-20 2003-09-02 Nt International, Inc. Sensor usable in ultra pure and highly corrosive environments
US7152478B2 (en) * 2000-07-20 2006-12-26 Entegris, Inc. Sensor usable in ultra pure and highly corrosive environments
US6564642B1 (en) 2000-11-02 2003-05-20 Kavlico Corporation Stable differential pressure measuring system
US6581468B2 (en) 2001-03-22 2003-06-24 Kavlico Corporation Independent-excitation cross-coupled differential-pressure transducer
US6906395B2 (en) * 2001-08-24 2005-06-14 Honeywell International, Inc. Hermetically sealed silicon micro-machined electromechanical system (MEMS) device having diffused conductors
US8718738B2 (en) * 2002-03-08 2014-05-06 Glt Acquisition Corp. Method and apparatus for coupling a sample probe with a sample site
US20090318786A1 (en) * 2002-03-08 2009-12-24 Blank Thomas B Channeled tissue sample probe method and apparatus
US8504128B2 (en) * 2002-03-08 2013-08-06 Glt Acquisition Corp. Method and apparatus for coupling a channeled sample probe to tissue
US6908845B2 (en) * 2002-03-28 2005-06-21 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
US20030183943A1 (en) * 2002-03-28 2003-10-02 Swan Johanna M. Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
US6848177B2 (en) 2002-03-28 2005-02-01 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
EP1460037A1 (en) * 2003-03-18 2004-09-22 SensoNor asa A multi-layer device and method for producing the same
EP1522521B1 (en) 2003-10-10 2015-12-09 Infineon Technologies AG Capacitive sensor
US7816745B2 (en) * 2005-02-25 2010-10-19 Medtronic, Inc. Wafer level hermetically sealed MEMS device
US7622782B2 (en) * 2005-08-24 2009-11-24 General Electric Company Pressure sensors and methods of making the same
EP1953516B1 (en) * 2007-01-31 2011-03-09 Infineon Technologies AG Micromechanical pressure sensing device
US10067022B2 (en) * 2016-08-05 2018-09-04 Denso International America, Inc. Absolute pressure sensor
DE102023101637A1 (de) 2023-01-24 2024-07-25 Infineon Technologies Ag Sensor zum Messen einer Gaseigenschaft

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3595719A (en) * 1968-11-27 1971-07-27 Mallory & Co Inc P R Method of bonding an insulator member to a passivating layer covering a surface of a semiconductor device
US3820401A (en) * 1972-11-07 1974-06-28 Sperry Rand Corp Piezoresistive bridge transducer
JPS5624387B2 (ja) * 1973-10-09 1981-06-05
US3918019A (en) * 1974-03-11 1975-11-04 Univ Leland Stanford Junior Miniature absolute pressure transducer assembly and method
US4079508A (en) * 1975-08-13 1978-03-21 The Board Of Trustees Of The Leland Stanford Junior University Miniature absolute pressure transducer assembly and method
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
DE2617731C3 (de) * 1976-04-23 1979-06-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Miniaturdruckmeßwandler

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427274A (en) * 1987-04-09 1989-01-30 Nippon Denso Co Semiconductor pressure sensor
US5041900A (en) * 1987-08-06 1991-08-20 Hamilton Standard Controls, Inc. Semiconductor device having sealed electrical feedthrough
JP2000065662A (ja) * 1998-08-20 2000-03-03 Unisia Jecs Corp 圧力センサおよびその製造方法

Also Published As

Publication number Publication date
AU528367B2 (en) 1983-04-28
US4291293A (en) 1981-09-22
DE2965860D1 (en) 1983-08-18
EP0010204B2 (en) 1986-07-16
EP0010204B1 (en) 1983-07-13
EP0010204A1 (en) 1980-04-30
JPS6313356B2 (ja) 1988-03-25
AU5100679A (en) 1980-04-03
CA1115857A (en) 1982-01-05

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