JPS5534448A - Thin film magnetoresistance element bias magnetic field adjusting method - Google Patents

Thin film magnetoresistance element bias magnetic field adjusting method

Info

Publication number
JPS5534448A
JPS5534448A JP10682978A JP10682978A JPS5534448A JP S5534448 A JPS5534448 A JP S5534448A JP 10682978 A JP10682978 A JP 10682978A JP 10682978 A JP10682978 A JP 10682978A JP S5534448 A JPS5534448 A JP S5534448A
Authority
JP
Japan
Prior art keywords
currents
bias
magnetic field
magnetic
bias magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10682978A
Other languages
Japanese (ja)
Other versions
JPS6217399B2 (en
Inventor
Tetsuo Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10682978A priority Critical patent/JPS5534448A/en
Publication of JPS5534448A publication Critical patent/JPS5534448A/en
Publication of JPS6217399B2 publication Critical patent/JPS6217399B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the optimum bias magnetic field by small currents, by gaining magnetic fields near to the optimum bias magnetic field by the remanence of a high, resistant magnetic-force film while adjusting divergence from the optimum bias magnetic field by magnetic fields generated by currents let flow to a conductive body.
CONSTITUTION: A high, resistant magnetic-force film 2 and a conductor film 7 are formed on a substrate 1 and etched. A magnetic resistance effect element consisting of stripes 4 and leads 5 is made up on a SiO2 film 3, electrode pads 6 are built up. Bias currents are introduced to the conductive layer 7 from the pads 6, and flow through a U-shaped conductor portion to generate bias magnetic fields. Meanwhile, sense currents are introduced from the one ends of the leads 5, are subject to the change of resistance being accompanied by the variation of the strength of external megnetism when the currents pass through the stripes 4 and detect the variation of the strength of external magnetism. Thus, bias can be adjusted by small currents because the remanence of the high, resistant magnetic-force film 2 is used for the bias magnetic fields, and the dispersion of bias conditions among elements can be eliminated.
COPYRIGHT: (C)1980,JPO&Japio
JP10682978A 1978-08-30 1978-08-30 Thin film magnetoresistance element bias magnetic field adjusting method Granted JPS5534448A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10682978A JPS5534448A (en) 1978-08-30 1978-08-30 Thin film magnetoresistance element bias magnetic field adjusting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10682978A JPS5534448A (en) 1978-08-30 1978-08-30 Thin film magnetoresistance element bias magnetic field adjusting method

Publications (2)

Publication Number Publication Date
JPS5534448A true JPS5534448A (en) 1980-03-11
JPS6217399B2 JPS6217399B2 (en) 1987-04-17

Family

ID=14443640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10682978A Granted JPS5534448A (en) 1978-08-30 1978-08-30 Thin film magnetoresistance element bias magnetic field adjusting method

Country Status (1)

Country Link
JP (1) JPS5534448A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721883A (en) * 1980-07-14 1982-02-04 Sharp Corp Magnetic reluctance effect element
JPS6034086A (en) * 1983-08-06 1985-02-21 Sharp Corp Magnetic sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721883A (en) * 1980-07-14 1982-02-04 Sharp Corp Magnetic reluctance effect element
JPH0221153B2 (en) * 1980-07-14 1990-05-11 Sharp Kk
JPS6034086A (en) * 1983-08-06 1985-02-21 Sharp Corp Magnetic sensor

Also Published As

Publication number Publication date
JPS6217399B2 (en) 1987-04-17

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