JPS5534448A - Thin film magnetoresistance element bias magnetic field adjusting method - Google Patents
Thin film magnetoresistance element bias magnetic field adjusting methodInfo
- Publication number
- JPS5534448A JPS5534448A JP10682978A JP10682978A JPS5534448A JP S5534448 A JPS5534448 A JP S5534448A JP 10682978 A JP10682978 A JP 10682978A JP 10682978 A JP10682978 A JP 10682978A JP S5534448 A JPS5534448 A JP S5534448A
- Authority
- JP
- Japan
- Prior art keywords
- currents
- bias
- magnetic field
- magnetic
- bias magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain the optimum bias magnetic field by small currents, by gaining magnetic fields near to the optimum bias magnetic field by the remanence of a high, resistant magnetic-force film while adjusting divergence from the optimum bias magnetic field by magnetic fields generated by currents let flow to a conductive body.
CONSTITUTION: A high, resistant magnetic-force film 2 and a conductor film 7 are formed on a substrate 1 and etched. A magnetic resistance effect element consisting of stripes 4 and leads 5 is made up on a SiO2 film 3, electrode pads 6 are built up. Bias currents are introduced to the conductive layer 7 from the pads 6, and flow through a U-shaped conductor portion to generate bias magnetic fields. Meanwhile, sense currents are introduced from the one ends of the leads 5, are subject to the change of resistance being accompanied by the variation of the strength of external megnetism when the currents pass through the stripes 4 and detect the variation of the strength of external magnetism. Thus, bias can be adjusted by small currents because the remanence of the high, resistant magnetic-force film 2 is used for the bias magnetic fields, and the dispersion of bias conditions among elements can be eliminated.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10682978A JPS5534448A (en) | 1978-08-30 | 1978-08-30 | Thin film magnetoresistance element bias magnetic field adjusting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10682978A JPS5534448A (en) | 1978-08-30 | 1978-08-30 | Thin film magnetoresistance element bias magnetic field adjusting method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5534448A true JPS5534448A (en) | 1980-03-11 |
JPS6217399B2 JPS6217399B2 (en) | 1987-04-17 |
Family
ID=14443640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10682978A Granted JPS5534448A (en) | 1978-08-30 | 1978-08-30 | Thin film magnetoresistance element bias magnetic field adjusting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5534448A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5721883A (en) * | 1980-07-14 | 1982-02-04 | Sharp Corp | Magnetic reluctance effect element |
JPS6034086A (en) * | 1983-08-06 | 1985-02-21 | Sharp Corp | Magnetic sensor |
-
1978
- 1978-08-30 JP JP10682978A patent/JPS5534448A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5721883A (en) * | 1980-07-14 | 1982-02-04 | Sharp Corp | Magnetic reluctance effect element |
JPH0221153B2 (en) * | 1980-07-14 | 1990-05-11 | Sharp Kk | |
JPS6034086A (en) * | 1983-08-06 | 1985-02-21 | Sharp Corp | Magnetic sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS6217399B2 (en) | 1987-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6352791B2 (en) | ||
JPS55110009A (en) | Inductance element | |
GB2081973A (en) | Hall effect device | |
JPS5534448A (en) | Thin film magnetoresistance element bias magnetic field adjusting method | |
JPS5534449A (en) | Thin film magnetoresistance element with bias magnetic field minute adjusting mechanism | |
JPS56124191A (en) | Magnetic bubble element | |
US5298485A (en) | Superconductive logic device | |
JPS5721883A (en) | Magnetic reluctance effect element | |
JPS554722A (en) | Magnetoresistance effect head | |
GB1269256A (en) | Semiconductor device for indicating magnetic fields | |
JPS5721882A (en) | Magnetic reluctance element | |
JPS55113124A (en) | Thin-film magnetic resistance head | |
JPS57147289A (en) | Magnetic reluctance effect element | |
JPS55142410A (en) | Multi-element magnetic head | |
JPS57145327A (en) | Manufacture of semiconductor device | |
JPS5534450A (en) | Method of applying bias magnetic field of magnetoresistance element | |
JPS54148577A (en) | Magnetic-field-detecting element | |
JPS5521181A (en) | Method of measuring positional deviation | |
JPS57105821A (en) | Magnetic resistance type magnetic head | |
JPH07249808A (en) | Magnetoelectric conversion element | |
JPH01227482A (en) | Magneto-resistive element | |
JPS6432712A (en) | Magnetic coupler | |
JPS56114121A (en) | Magnetic head | |
JPS56125865A (en) | Coil | |
JPS6418068A (en) | Detecting device of current |