JPS6413209A - Yoke type thin film magnetic head - Google Patents

Yoke type thin film magnetic head

Info

Publication number
JPS6413209A
JPS6413209A JP16761687A JP16761687A JPS6413209A JP S6413209 A JPS6413209 A JP S6413209A JP 16761687 A JP16761687 A JP 16761687A JP 16761687 A JP16761687 A JP 16761687A JP S6413209 A JPS6413209 A JP S6413209A
Authority
JP
Japan
Prior art keywords
effect element
resistance effect
thin film
magneto
yoke
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16761687A
Other languages
Japanese (ja)
Inventor
Ichiro Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP16761687A priority Critical patent/JPS6413209A/en
Publication of JPS6413209A publication Critical patent/JPS6413209A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To improve the sensitivity of a magneto-resistance effect element, and to prevent the break down of the element due to heat generation by magnetically coupling the magneto-resistance effect element of a thin film between a front yoke and a back yoke, formed on a substrate, and adding a shunt layer to impress a bias magnetic field as the substratum of the magneto-resistance effect element. CONSTITUTION:A thin film-shaped insulation film 12 is formed on a yoke type thin film magnetic head, and the front yoke 13 and the back yoke 14 are formed on the insulation film 12 by an etching processing. The magneto-resistance effect element 15 of the thin film is arranged closely and solitarily as it is in an electrically insulated state. The shunt layer 17 to impress the bias magnetic field to the resistance effect element 15 is added as the substratum of the resistance effect element 15. Then, the sensitivity of the resistance effect element 15 is improved, and at the same time, the break down of the resistance effect element 15 due to the heat generation is prevented by a simple means.
JP16761687A 1987-07-03 1987-07-03 Yoke type thin film magnetic head Pending JPS6413209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16761687A JPS6413209A (en) 1987-07-03 1987-07-03 Yoke type thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16761687A JPS6413209A (en) 1987-07-03 1987-07-03 Yoke type thin film magnetic head

Publications (1)

Publication Number Publication Date
JPS6413209A true JPS6413209A (en) 1989-01-18

Family

ID=15853087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16761687A Pending JPS6413209A (en) 1987-07-03 1987-07-03 Yoke type thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS6413209A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0669609A2 (en) * 1994-02-28 1995-08-30 Commissariat A L'energie Atomique Magnetic read head with magnetoresistive element and improved biasing means
US6418001B1 (en) 1998-12-21 2002-07-09 Hitachi, Ltd. Tunneling magnetoresistive element using a bias magnetic field

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378310A (en) * 1986-09-19 1988-04-08 Fujitsu Ltd Magnetoresistance effect type playback head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378310A (en) * 1986-09-19 1988-04-08 Fujitsu Ltd Magnetoresistance effect type playback head

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0669609A2 (en) * 1994-02-28 1995-08-30 Commissariat A L'energie Atomique Magnetic read head with magnetoresistive element and improved biasing means
FR2716741A1 (en) * 1994-02-28 1995-09-01 Commissariat Energie Atomique Magnetic reading head with magnetoresistive element and advanced polarization means.
EP0669609A3 (en) * 1994-02-28 1995-10-18 Commissariat Energie Atomique Magnetic read head with magnetoresistive element and improved biasing means.
US6418001B1 (en) 1998-12-21 2002-07-09 Hitachi, Ltd. Tunneling magnetoresistive element using a bias magnetic field
US6483676B2 (en) 1998-12-21 2002-11-19 Hitachi, Ltd. Magnetic head with tunneling magnetoresistive element biased by current controller
US6556393B2 (en) 1998-12-21 2003-04-29 Hitachi, Ltd. Magnetic recording apparatus with tunneling magnetoresistive element biased by current controller
US6771474B2 (en) 1998-12-21 2004-08-03 Hitachi, Ltd. Magnetic head with tunneling multi-layer magnetoresistive element biased by current controller

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