JPS5530873A - High withstand field-effect transistor of mis type - Google Patents

High withstand field-effect transistor of mis type

Info

Publication number
JPS5530873A
JPS5530873A JP10465878A JP10465878A JPS5530873A JP S5530873 A JPS5530873 A JP S5530873A JP 10465878 A JP10465878 A JP 10465878A JP 10465878 A JP10465878 A JP 10465878A JP S5530873 A JPS5530873 A JP S5530873A
Authority
JP
Japan
Prior art keywords
field
drain
source
effect transistor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10465878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6314502B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10465878A priority Critical patent/JPS5530873A/ja
Publication of JPS5530873A publication Critical patent/JPS5530873A/ja
Publication of JPS6314502B2 publication Critical patent/JPS6314502B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP10465878A 1978-08-28 1978-08-28 High withstand field-effect transistor of mis type Granted JPS5530873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10465878A JPS5530873A (en) 1978-08-28 1978-08-28 High withstand field-effect transistor of mis type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10465878A JPS5530873A (en) 1978-08-28 1978-08-28 High withstand field-effect transistor of mis type

Publications (2)

Publication Number Publication Date
JPS5530873A true JPS5530873A (en) 1980-03-04
JPS6314502B2 JPS6314502B2 (enrdf_load_stackoverflow) 1988-03-31

Family

ID=14386555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10465878A Granted JPS5530873A (en) 1978-08-28 1978-08-28 High withstand field-effect transistor of mis type

Country Status (1)

Country Link
JP (1) JPS5530873A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131773A (ja) * 1982-02-01 1983-08-05 Hitachi Ltd 半導体装置の製造方法
JPH05198796A (ja) * 1991-01-11 1993-08-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272186A (en) * 1975-12-12 1977-06-16 Fujitsu Ltd Production of mis type semiconductor device
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272186A (en) * 1975-12-12 1977-06-16 Fujitsu Ltd Production of mis type semiconductor device
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131773A (ja) * 1982-02-01 1983-08-05 Hitachi Ltd 半導体装置の製造方法
JPH05198796A (ja) * 1991-01-11 1993-08-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Also Published As

Publication number Publication date
JPS6314502B2 (enrdf_load_stackoverflow) 1988-03-31

Similar Documents

Publication Publication Date Title
JPS5366181A (en) High dielectric strength mis type transistor
JPS5382179A (en) Field effect transistor
JPS5530873A (en) High withstand field-effect transistor of mis type
JPS5370687A (en) Production of semiconductor device
JPS5346288A (en) Mis type semiconductor device
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS52127181A (en) Insulated gate type filed effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS5412566A (en) Production of semiconductor device
JPS53135582A (en) Semiconductor device and its manufacture
JPS5376770A (en) Production of insulated gate field effect transistor
JPS5286086A (en) Field effect transistor
JPS53100779A (en) Production of insulated gate type semiconductor device
JPS52100875A (en) Mos transistor
JPS52147983A (en) Insulation gate type semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5317284A (en) Production of semiconductor device
JPS5360181A (en) Production of mos type field effect transistor
JPS53112679A (en) Manufacture for mis type semiconductor device
JPS52123878A (en) Mos type semiconductor device and its production process
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5353980A (en) Semiconductor device
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS536581A (en) Insulated gate type field effect semiconductor device
JPS5287990A (en) Semiconductor device