JPS5524464A - Complex semiconductor system - Google Patents
Complex semiconductor systemInfo
- Publication number
- JPS5524464A JPS5524464A JP9725178A JP9725178A JPS5524464A JP S5524464 A JPS5524464 A JP S5524464A JP 9725178 A JP9725178 A JP 9725178A JP 9725178 A JP9725178 A JP 9725178A JP S5524464 A JPS5524464 A JP S5524464A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- dielectric strength
- dielectric
- plate
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
PURPOSE:To make the circumferential portion of an insulating plae thicker than the portion directly under a wiring metallic plate thereof for reducing the tehrmal resistance between a semiconductor element and a metallic fan without affecting dielectric strength. CONSTITUTION:A wiring metallic plate 13 is selver-soldered 12 on an insulating plate 11 of ceramic for example. While the thickness D of the circumferential portion of said insulating plate 11 is kept at a value necessary for obtaining a dielectric strength, that (d) directly under said wiring metallic plate 13 thereof is lessened for lowering thermal resistance thereof. With excessive decrease in said thickness (d), however, the problem of the dielectric breakdown of said insulating plate 11 occurs. In the case of ceramic, therefore, the lower limit of said thickness (d) is 0.3mm when dielectric strength is 2.000VAC. Thereby, dielectric strengrh depends on creeping discharge that considerably depends on said thickness D so that dielectric strength can be increased. On the other hand, heat conducgivity can be radised by lessening said thickness (d).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9725178A JPS5524464A (en) | 1978-08-11 | 1978-08-11 | Complex semiconductor system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9725178A JPS5524464A (en) | 1978-08-11 | 1978-08-11 | Complex semiconductor system |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5524464A true JPS5524464A (en) | 1980-02-21 |
JPS6122859B2 JPS6122859B2 (en) | 1986-06-03 |
Family
ID=14187343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9725178A Granted JPS5524464A (en) | 1978-08-11 | 1978-08-11 | Complex semiconductor system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524464A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326025U (en) * | 1976-08-12 | 1978-03-06 |
-
1978
- 1978-08-11 JP JP9725178A patent/JPS5524464A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326025U (en) * | 1976-08-12 | 1978-03-06 | ||
JPS5642410Y2 (en) * | 1976-08-12 | 1981-10-05 |
Also Published As
Publication number | Publication date |
---|---|
JPS6122859B2 (en) | 1986-06-03 |
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