JPS55166964A - Avalanche injection type non-volatile semiconductor memory - Google Patents

Avalanche injection type non-volatile semiconductor memory

Info

Publication number
JPS55166964A
JPS55166964A JP7531879A JP7531879A JPS55166964A JP S55166964 A JPS55166964 A JP S55166964A JP 7531879 A JP7531879 A JP 7531879A JP 7531879 A JP7531879 A JP 7531879A JP S55166964 A JPS55166964 A JP S55166964A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
injection type
type non
avalanche injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7531879A
Other languages
Japanese (ja)
Inventor
Osamu Ueda
Kanichi Harima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7531879A priority Critical patent/JPS55166964A/en
Publication of JPS55166964A publication Critical patent/JPS55166964A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Abstract

PURPOSE:To improve the capacity coupling degree of an avalanche injection type non-volatile semiconductor memory by altering the area of the extended portion of a gate to determine the capacity coupling coefficient of a control gate to a floating gate. CONSTITUTION:The extensions of gates 5, 6 are increased in width wider than the channel of the respective gates 5, 6. By employing the pattern layout, the capacity coupling degree of the extensions 1 of the gates 5, 6 can be altered without changing the length and width of the channel of a memory transistor.
JP7531879A 1979-06-14 1979-06-14 Avalanche injection type non-volatile semiconductor memory Pending JPS55166964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7531879A JPS55166964A (en) 1979-06-14 1979-06-14 Avalanche injection type non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7531879A JPS55166964A (en) 1979-06-14 1979-06-14 Avalanche injection type non-volatile semiconductor memory

Publications (1)

Publication Number Publication Date
JPS55166964A true JPS55166964A (en) 1980-12-26

Family

ID=13572781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7531879A Pending JPS55166964A (en) 1979-06-14 1979-06-14 Avalanche injection type non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS55166964A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636166A (en) * 1979-08-31 1981-04-09 Toshiba Corp Nonvolatile semiconductor memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636166A (en) * 1979-08-31 1981-04-09 Toshiba Corp Nonvolatile semiconductor memory
JPS6244702B2 (en) * 1979-08-31 1987-09-22 Tokyo Shibaura Electric Co

Similar Documents

Publication Publication Date Title
JPS5728364A (en) Semiconductor memory device
DE69432568D1 (en) SELF-ADJUSTING FLASH EEPROM CELL WITH DOUBLE BIT-DIVIDED GAT
DE3782279T2 (en) ELECTRICALLY CHANGEABLE, NON-VOLATILE STORAGE ARRANGEMENT OF THE FLOATING GATE TYPE, WITH A LESS TUNNEL EFFECT AREA AND MANUFACTURE THEREOF.
KR890012322A (en) Floating Gate EERROM Memory with Source Line Select Transistor
KR920020715A (en) Nonvolatile memory
GB2020484B (en) Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
SE7907193L (en) Permanent memory
JPS55166964A (en) Avalanche injection type non-volatile semiconductor memory
JPS5780779A (en) Semiconductor non-volatile memory
JPS5419372A (en) Production of semiconductor memory
JPS5636166A (en) Nonvolatile semiconductor memory
JPS5397381A (en) Nonvoltile semiconductor memory
JPS5596672A (en) Semiconductor device
JPS5247684A (en) Floating gate type transistor
JPS5440043A (en) Semiconductor memory
JPS5388583A (en) Non-volatile memory element
JPS52146569A (en) Semiconductor memory device
JPS5245287A (en) Semiconductor memory element
JPS52127181A (en) Insulated gate type filed effect transistor
JPS5292441A (en) Semiconductor memory unit
DE69009221D1 (en) MOS memory cell with an exponential doping profile and with offset tunnel oxide of the floating gate.
JPS57172591A (en) Read-only semiconductor storage device
KR920005146A (en) Semiconductor memory and its operation method
JPS5676559A (en) Semiconductor integrated circuit
JPS54101229A (en) Memory circuit