JPS55166955A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55166955A
JPS55166955A JP7438479A JP7438479A JPS55166955A JP S55166955 A JPS55166955 A JP S55166955A JP 7438479 A JP7438479 A JP 7438479A JP 7438479 A JP7438479 A JP 7438479A JP S55166955 A JPS55166955 A JP S55166955A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
approx
leg
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7438479A
Other languages
Japanese (ja)
Other versions
JPS6226576B2 (en
Inventor
Yoichi Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7438479A priority Critical patent/JPS55166955A/en
Publication of JPS55166955A publication Critical patent/JPS55166955A/en
Publication of JPS6226576B2 publication Critical patent/JPS6226576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the high frequency characteristics of a semiconductor device by forming stably an air gap having the smallest specific inductive capaicty under the ball-like electrode. CONSTITUTION:A leg 7 having a height of approx. 3mu is provided at three portions on the lower surface of a ball-like silver electrode 6 provided on the Schottky barrier metal 2, and the electrode 6 is floated in the amount of the leg 7 on the oxide protective film 5. Since the electrode 6 has three legs 7 on the periphery, even if pressure is applied from the glass container probe thereto during assembling step in the glass container to the semiconductor device, the latter is not crushed but retains air gap of approx 2mu.
JP7438479A 1979-06-13 1979-06-13 Semiconductor device Granted JPS55166955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7438479A JPS55166955A (en) 1979-06-13 1979-06-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7438479A JPS55166955A (en) 1979-06-13 1979-06-13 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55166955A true JPS55166955A (en) 1980-12-26
JPS6226576B2 JPS6226576B2 (en) 1987-06-09

Family

ID=13545611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7438479A Granted JPS55166955A (en) 1979-06-13 1979-06-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166955A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5035656U (en) * 1973-05-22 1975-04-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5035656U (en) * 1973-05-22 1975-04-15

Also Published As

Publication number Publication date
JPS6226576B2 (en) 1987-06-09

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