JPS55163692A - Driving method for charge transfer element - Google Patents

Driving method for charge transfer element

Info

Publication number
JPS55163692A
JPS55163692A JP7141979A JP7141979A JPS55163692A JP S55163692 A JPS55163692 A JP S55163692A JP 7141979 A JP7141979 A JP 7141979A JP 7141979 A JP7141979 A JP 7141979A JP S55163692 A JPS55163692 A JP S55163692A
Authority
JP
Japan
Prior art keywords
reset
potential
stored
layer
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7141979A
Other languages
Japanese (ja)
Other versions
JPS6232557B2 (en
Inventor
Akihiro Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7141979A priority Critical patent/JPS55163692A/en
Publication of JPS55163692A publication Critical patent/JPS55163692A/en
Publication of JPS6232557B2 publication Critical patent/JPS6232557B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To reduce the feed-through as well as the reset noise, by approximating the reset pulse voltage at the non-conducting time of the reset transistor to the fixed reset gate potential when the necessary maximum charge amount is stored to the floating diffusion layer.
CONSTITUTION: The potential is set to level 23 when the necessary maximum charge amount is stored to floating diffusion layer 17. In that case, the charge does not flow out toward reset drain 18 until the charge detection amount is secured if the channel potential right under reset gate 19 is shallower than level 23. Thus the normal charge detection is carried out. On the other hand, the voltage of reset pulse 25 at the non-conducting time of the reset transistor is approximated to the gate voltage with which the coincidence is obtained between the potential of layer 17 when the necessary maximum charge amount is stored to layer 17 and the channel potential right under noise 27 can be reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP7141979A 1979-06-07 1979-06-07 Driving method for charge transfer element Granted JPS55163692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7141979A JPS55163692A (en) 1979-06-07 1979-06-07 Driving method for charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7141979A JPS55163692A (en) 1979-06-07 1979-06-07 Driving method for charge transfer element

Publications (2)

Publication Number Publication Date
JPS55163692A true JPS55163692A (en) 1980-12-19
JPS6232557B2 JPS6232557B2 (en) 1987-07-15

Family

ID=13459964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7141979A Granted JPS55163692A (en) 1979-06-07 1979-06-07 Driving method for charge transfer element

Country Status (1)

Country Link
JP (1) JPS55163692A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5078283A (en) * 1973-11-09 1975-06-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5078283A (en) * 1973-11-09 1975-06-26

Also Published As

Publication number Publication date
JPS6232557B2 (en) 1987-07-15

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