JPS55162254A - Composite integrated circuit - Google Patents
Composite integrated circuitInfo
- Publication number
- JPS55162254A JPS55162254A JP7034479A JP7034479A JPS55162254A JP S55162254 A JPS55162254 A JP S55162254A JP 7034479 A JP7034479 A JP 7034479A JP 7034479 A JP7034479 A JP 7034479A JP S55162254 A JPS55162254 A JP S55162254A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- film
- thin
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
PURPOSE:To obtain resistance values expanding over a wide range by the method wherein the resist is formed in one layer and two layers of different area resistance values when a composite integrated circuit is formed by providing a thin Ta film capacitor and a thin Ta film resistor on the same substrate. CONSTITUTION:Thin Ta film 2 is coated on ceramic insulation substrate 1. By retaining only the region which is to become a capacitor and a low resistance, the film is removed by etching. Constant voltage forming is operated on a part of the capacitor region, and thereby this is converted into dielectric layer 3. Next, the entire surface is covered with a laminate of Ta nitride layer 4 and conducting layer 5 of Ti-Au. Conducting layer 5 on dielectric body 3 is removed by etching. Further, a part of layer 4 is removed, and thereby a desired resistance pattern is obtained. In this way, layer 4 consisting of only one layer is provided at the place where a high resistance is formed. A two layered structure, of layer 4 and layer 2, which was provided previously, is formed at the place where a low resistance is formed. The resistor is heat treated or anodized. After Cr-Au electrode layer 6 is provided, the resistance of the resistor is set at a desired value by laser trimming.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7034479A JPS55162254A (en) | 1979-06-05 | 1979-06-05 | Composite integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7034479A JPS55162254A (en) | 1979-06-05 | 1979-06-05 | Composite integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55162254A true JPS55162254A (en) | 1980-12-17 |
Family
ID=13428699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7034479A Pending JPS55162254A (en) | 1979-06-05 | 1979-06-05 | Composite integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55162254A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0256568A2 (en) * | 1986-07-15 | 1988-02-24 | Siemens Telecomunicazioni S.P.A. | Process for obtaining thin-film circuits and passive circuit made by said process |
JPS63244869A (en) * | 1987-03-31 | 1988-10-12 | Fujitsu General Ltd | Substrate for thin film hybrid ic |
JPS63244866A (en) * | 1987-03-31 | 1988-10-12 | Fujitsu General Ltd | Substrate for thin film hybrid ic |
WO1989006086A1 (en) * | 1987-12-18 | 1989-06-29 | Mitsui Mining & Smelting Co., Ltd. | Thin-film conductive circuit and process for its production |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5436576A (en) * | 1977-08-26 | 1979-03-17 | Shin Kobe Electric Machinery | Laminated board for printed wiring circuit with resistance body |
-
1979
- 1979-06-05 JP JP7034479A patent/JPS55162254A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5436576A (en) * | 1977-08-26 | 1979-03-17 | Shin Kobe Electric Machinery | Laminated board for printed wiring circuit with resistance body |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0256568A2 (en) * | 1986-07-15 | 1988-02-24 | Siemens Telecomunicazioni S.P.A. | Process for obtaining thin-film circuits and passive circuit made by said process |
JPS63244869A (en) * | 1987-03-31 | 1988-10-12 | Fujitsu General Ltd | Substrate for thin film hybrid ic |
JPS63244866A (en) * | 1987-03-31 | 1988-10-12 | Fujitsu General Ltd | Substrate for thin film hybrid ic |
WO1989006086A1 (en) * | 1987-12-18 | 1989-06-29 | Mitsui Mining & Smelting Co., Ltd. | Thin-film conductive circuit and process for its production |
US5032694A (en) * | 1987-12-18 | 1991-07-16 | Mitsui Mining & Smelting Co., Ltd. | Conductive film circuit and method of manufacturing the same |
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