JPS55160451A - Isolation type reverse conducting thyristor stack - Google Patents

Isolation type reverse conducting thyristor stack

Info

Publication number
JPS55160451A
JPS55160451A JP6680079A JP6680079A JPS55160451A JP S55160451 A JPS55160451 A JP S55160451A JP 6680079 A JP6680079 A JP 6680079A JP 6680079 A JP6680079 A JP 6680079A JP S55160451 A JPS55160451 A JP S55160451A
Authority
JP
Japan
Prior art keywords
cooler
reverse conducting
conducting type
wafer
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6680079A
Other languages
Japanese (ja)
Other versions
JPS5729855B2 (en
Inventor
Kimihiro Muraoka
Yoshinobu Otsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP6680079A priority Critical patent/JPS55160451A/en
Publication of JPS55160451A publication Critical patent/JPS55160451A/en
Publication of JPS5729855B2 publication Critical patent/JPS5729855B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)

Abstract

PURPOSE:To obtain a large capacious element having high yield with smaller wafer than the same capcious integral reverse conducting type SCR by separately forming the reverse conducting type SCR from a diode and connecting both the elements when assembling into a stack in antiparallel manner. CONSTITUTION:A cooler 3', a flat reverse conducting type SCR1 having no reverse stopping capacity, a cooler 4', a flat diode 2 and a cooler 5' are sequentially superimposed through insulators 9 and uniformly pressurized. The coolers and the respective elements at the outer periphery are concentrically surrounded with shorting piece 7' to short between the cooler 3' and the cooler 5'. Since the inverts the current flowing into the SCR1 with respect to the current flowing out therefrom, it operates an action similar to the coaxial cable to reduce the floating inductance. Accordingly, it can form a large capacious reverse conducting type SCR stack. Since smaller Si wafer can be formed than the integral type in one wafer with the same capacity elements with high yield, it can also reduce its cost.
JP6680079A 1979-05-31 1979-05-31 Isolation type reverse conducting thyristor stack Granted JPS55160451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6680079A JPS55160451A (en) 1979-05-31 1979-05-31 Isolation type reverse conducting thyristor stack

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6680079A JPS55160451A (en) 1979-05-31 1979-05-31 Isolation type reverse conducting thyristor stack

Publications (2)

Publication Number Publication Date
JPS55160451A true JPS55160451A (en) 1980-12-13
JPS5729855B2 JPS5729855B2 (en) 1982-06-25

Family

ID=13326298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6680079A Granted JPS55160451A (en) 1979-05-31 1979-05-31 Isolation type reverse conducting thyristor stack

Country Status (1)

Country Link
JP (1) JPS55160451A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245168U (en) * 1975-09-29 1977-03-30
JPS5455171A (en) * 1977-10-11 1979-05-02 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245168U (en) * 1975-09-29 1977-03-30
JPS5455171A (en) * 1977-10-11 1979-05-02 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5729855B2 (en) 1982-06-25

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