JPS5552249A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5552249A JPS5552249A JP12552178A JP12552178A JPS5552249A JP S5552249 A JPS5552249 A JP S5552249A JP 12552178 A JP12552178 A JP 12552178A JP 12552178 A JP12552178 A JP 12552178A JP S5552249 A JPS5552249 A JP S5552249A
- Authority
- JP
- Japan
- Prior art keywords
- cooling
- wind tunnel
- semiconductor element
- iron core
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Power Conversion In General (AREA)
Abstract
PURPOSE:To provide a semiconductor device which is miniaturized in size by arranging a member of controlling the di/dt values on the periphery of a semiconductor element and yet inside a cooling wind tunnel so that both the control member and the semiconductor element are cooled at the same time within the common cooling device wind tunnel. CONSTITUTION:In power rectifiers, inverters, switches, breakers, and the like, a flat type semiconductor element 1 is additionally equipped, for example, with a cylindrically shaped core 2 made of iron to produce inductance so that the transient di/dt values of the semiconductor element 1 may be controlled. A cooling fin 4 is fitted to both electrodes of the element 1, with the iron core 2 provided between the periphery of the element 1 and the cooling fin 4. The thus formed composite is placed within a wind tunnel 9 to be cooled, using a cooling fan 6. The iron core tends to become exothermic by hysteresis loss, but since it is situated near to the element 1 within the wind tunnel 9, no extra cooling means to be used exclusively for cooling the iron core may be required any longer. This is why the semiconductor device can be made smaller sized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12552178A JPS5552249A (en) | 1978-10-12 | 1978-10-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12552178A JPS5552249A (en) | 1978-10-12 | 1978-10-12 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5552249A true JPS5552249A (en) | 1980-04-16 |
Family
ID=14912205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12552178A Pending JPS5552249A (en) | 1978-10-12 | 1978-10-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5552249A (en) |
-
1978
- 1978-10-12 JP JP12552178A patent/JPS5552249A/en active Pending
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