JPS55158622A - Manufacture of silicon carbide material for semiconductor - Google Patents

Manufacture of silicon carbide material for semiconductor

Info

Publication number
JPS55158622A
JPS55158622A JP6706979A JP6706979A JPS55158622A JP S55158622 A JPS55158622 A JP S55158622A JP 6706979 A JP6706979 A JP 6706979A JP 6706979 A JP6706979 A JP 6706979A JP S55158622 A JPS55158622 A JP S55158622A
Authority
JP
Japan
Prior art keywords
silicon carbide
tube
product
calcined
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6706979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310576B2 (enrdf_load_stackoverflow
Inventor
Kazunori Meguro
Takashi Tanaka
Masayoshi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP6706979A priority Critical patent/JPS55158622A/ja
Publication of JPS55158622A publication Critical patent/JPS55158622A/ja
Publication of JPS6310576B2 publication Critical patent/JPS6310576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
JP6706979A 1979-05-30 1979-05-30 Manufacture of silicon carbide material for semiconductor Granted JPS55158622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6706979A JPS55158622A (en) 1979-05-30 1979-05-30 Manufacture of silicon carbide material for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6706979A JPS55158622A (en) 1979-05-30 1979-05-30 Manufacture of silicon carbide material for semiconductor

Publications (2)

Publication Number Publication Date
JPS55158622A true JPS55158622A (en) 1980-12-10
JPS6310576B2 JPS6310576B2 (enrdf_load_stackoverflow) 1988-03-08

Family

ID=13334183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6706979A Granted JPS55158622A (en) 1979-05-30 1979-05-30 Manufacture of silicon carbide material for semiconductor

Country Status (1)

Country Link
JP (1) JPS55158622A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338755A1 (de) * 1982-10-28 1984-05-03 Toshiba Ceramics Co., Ltd., Tokio/Topkyo Formkoerper auf siliziumkarbidbasis zum einsatz bei der halbleiterherstellung
JPS60246264A (ja) * 1984-05-23 1985-12-05 東芝セラミツクス株式会社 炭化珪素質材料の製造方法
US5179049A (en) * 1990-11-20 1993-01-12 Asahi Glass Company Ltd. Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof
US6419757B2 (en) 1998-12-08 2002-07-16 Bridgestone, Corporation Method for cleaning sintered silicon carbide in wet condition

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236977A (en) * 1975-09-19 1977-03-22 Tokai Carbon Co Ltd Semiconductor heating furnace tube and process for production of same
JPS52145419A (en) * 1976-05-29 1977-12-03 Toshiba Ceramics Co Manufacture of silicon carbide articles for semiconductor production
JPS5384013A (en) * 1976-12-27 1978-07-25 Carborundum Co Silicon carbide powder composition
JPS53130711A (en) * 1977-04-21 1978-11-15 Denki Kagaku Kogyo Kk Manufacture of silicone carbide molds
JPS54133504A (en) * 1978-04-10 1979-10-17 Ibigawa Electric Ind Co Ltd Manufacture of high density carborundum sintered body

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236977A (en) * 1975-09-19 1977-03-22 Tokai Carbon Co Ltd Semiconductor heating furnace tube and process for production of same
JPS52145419A (en) * 1976-05-29 1977-12-03 Toshiba Ceramics Co Manufacture of silicon carbide articles for semiconductor production
JPS5384013A (en) * 1976-12-27 1978-07-25 Carborundum Co Silicon carbide powder composition
JPS53130711A (en) * 1977-04-21 1978-11-15 Denki Kagaku Kogyo Kk Manufacture of silicone carbide molds
JPS54133504A (en) * 1978-04-10 1979-10-17 Ibigawa Electric Ind Co Ltd Manufacture of high density carborundum sintered body

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338755A1 (de) * 1982-10-28 1984-05-03 Toshiba Ceramics Co., Ltd., Tokio/Topkyo Formkoerper auf siliziumkarbidbasis zum einsatz bei der halbleiterherstellung
JPS60246264A (ja) * 1984-05-23 1985-12-05 東芝セラミツクス株式会社 炭化珪素質材料の製造方法
US5179049A (en) * 1990-11-20 1993-01-12 Asahi Glass Company Ltd. Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof
US6419757B2 (en) 1998-12-08 2002-07-16 Bridgestone, Corporation Method for cleaning sintered silicon carbide in wet condition

Also Published As

Publication number Publication date
JPS6310576B2 (enrdf_load_stackoverflow) 1988-03-08

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