JPS5515254A - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device

Info

Publication number
JPS5515254A
JPS5515254A JP8859378A JP8859378A JPS5515254A JP S5515254 A JPS5515254 A JP S5515254A JP 8859378 A JP8859378 A JP 8859378A JP 8859378 A JP8859378 A JP 8859378A JP S5515254 A JPS5515254 A JP S5515254A
Authority
JP
Japan
Prior art keywords
light
interference
film
thickness
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8859378A
Other languages
Japanese (ja)
Inventor
Yoichiro Taki
Hiroaki Emoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8859378A priority Critical patent/JPS5515254A/en
Publication of JPS5515254A publication Critical patent/JPS5515254A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To effect a pattern alignment of a mask even if the step difference of a film thickness may be slight by making use of the interference of a light in the thin film.
CONSTITUTION: When a light of wavelength of λ is projected to a thin film having a thickness d and a defractive rate n, the interference of the light is canceled if 2d=(2k-1/2).λ/n. cap. When the light with the wavelenght λ1 is projected to a portion A with the thickness d1 of an oxidization film 2, the portion A is turned to black color, but any interference is not caused in a portion B and the light with the wavelength λ1 is appeared only. Therefore, a pattern alignment for a mask 4 can be performed. The light having an appropriate wavelength can be obtained by inserting a colored glass before a white light source. According to this construction, the desirable pattern alignment capable of discrimination cna be established by making use of the interference due to a signal color light even if the discrimination of the film surface can not fully made due to the surface step.
COPYRIGHT: (C)1980,JPO&Japio
JP8859378A 1978-07-19 1978-07-19 Manufacturing method for semiconductor device Pending JPS5515254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8859378A JPS5515254A (en) 1978-07-19 1978-07-19 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8859378A JPS5515254A (en) 1978-07-19 1978-07-19 Manufacturing method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5515254A true JPS5515254A (en) 1980-02-02

Family

ID=13947120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8859378A Pending JPS5515254A (en) 1978-07-19 1978-07-19 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5515254A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142609A (en) * 1986-12-05 1988-06-15 Taamo:Kk Engaging tool

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142609A (en) * 1986-12-05 1988-06-15 Taamo:Kk Engaging tool

Similar Documents

Publication Publication Date Title
EP0383534A3 (en) Exposure mask, method of manufacturing the same, and exposure method using the same
EP0395425A3 (en) Mask, mask producing method and pattern forming method using mask
JPS57190912A (en) Production of color filter
JPS539523A (en) Camera with light source light recording device
JPS5355122A (en) Color photographic material
JPS5515254A (en) Manufacturing method for semiconductor device
JPS57148706A (en) Production of color filter
JPS576849A (en) Photomask and its preparation
JPS5220830A (en) Color photographic light sensitive material
JPS53110379A (en) Optical filter and its manufacture
JPS5218313A (en) Light diffusion plate
JPS5596952A (en) Production of photomask
JPS5238944A (en) Optical system for scanning
JPS5538548A (en) Partial color filter including blank margin
JPS52153665A (en) Etching method of film
JPS56144536A (en) Pattern formation and p-n junction formation
JPS5555528A (en) Mask aligner
JPS576848A (en) Photomask and its preparation
JPS5286076A (en) Pattern formation of semiconductor element on diazo plate
JPS5543542A (en) Exposure method and exposure mask used for this
JPS5617020A (en) Judgement of etching end point
JPS57212445A (en) Production of photomask
JPS539122A (en) Color photographic light sensitive material
JPS5492062A (en) Pattern exposing mask
JPS55140169A (en) Method of inspecting printed circuit plate