JPS55149192A - Manufacture of silicon carbide crystal layer - Google Patents

Manufacture of silicon carbide crystal layer

Info

Publication number
JPS55149192A
JPS55149192A JP5612179A JP5612179A JPS55149192A JP S55149192 A JPS55149192 A JP S55149192A JP 5612179 A JP5612179 A JP 5612179A JP 5612179 A JP5612179 A JP 5612179A JP S55149192 A JPS55149192 A JP S55149192A
Authority
JP
Japan
Prior art keywords
substrate
sic
temp
layer
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5612179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6120515B2 (enrdf_load_stackoverflow
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5612179A priority Critical patent/JPS55149192A/ja
Publication of JPS55149192A publication Critical patent/JPS55149192A/ja
Publication of JPS6120515B2 publication Critical patent/JPS6120515B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP5612179A 1979-05-07 1979-05-07 Manufacture of silicon carbide crystal layer Granted JPS55149192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5612179A JPS55149192A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5612179A JPS55149192A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55149192A true JPS55149192A (en) 1980-11-20
JPS6120515B2 JPS6120515B2 (enrdf_load_stackoverflow) 1986-05-22

Family

ID=13018230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5612179A Granted JPS55149192A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS55149192A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
KR100978711B1 (ko) 2008-07-25 2010-08-30 울산대학교 산학협력단 인시츄 도핑에 의한 다결정 탄화규소 박막 성장방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
KR100978711B1 (ko) 2008-07-25 2010-08-30 울산대학교 산학협력단 인시츄 도핑에 의한 다결정 탄화규소 박막 성장방법

Also Published As

Publication number Publication date
JPS6120515B2 (enrdf_load_stackoverflow) 1986-05-22

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