JPS55140791A - Method and device for manufacturing large area silicon crystal plate having pillarrshaped texture - Google Patents

Method and device for manufacturing large area silicon crystal plate having pillarrshaped texture

Info

Publication number
JPS55140791A
JPS55140791A JP4553780A JP4553780A JPS55140791A JP S55140791 A JPS55140791 A JP S55140791A JP 4553780 A JP4553780 A JP 4553780A JP 4553780 A JP4553780 A JP 4553780A JP S55140791 A JPS55140791 A JP S55140791A
Authority
JP
Japan
Prior art keywords
pillarrshaped
texture
large area
silicon crystal
crystal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4553780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6343358B2 (cg-RX-API-DMAC7.html
Inventor
Guraapumaiyaa Yoozefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS55140791A publication Critical patent/JPS55140791A/ja
Publication of JPS6343358B2 publication Critical patent/JPS6343358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
JP4553780A 1979-04-10 1980-04-07 Method and device for manufacturing large area silicon crystal plate having pillarrshaped texture Granted JPS55140791A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792914506 DE2914506A1 (de) 1979-04-10 1979-04-10 Verfahren zum herstellen von grossflaechigen, plattenfoermigen siliziumkristallen mit kolumnarstruktur

Publications (2)

Publication Number Publication Date
JPS55140791A true JPS55140791A (en) 1980-11-04
JPS6343358B2 JPS6343358B2 (cg-RX-API-DMAC7.html) 1988-08-30

Family

ID=6067988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4553780A Granted JPS55140791A (en) 1979-04-10 1980-04-07 Method and device for manufacturing large area silicon crystal plate having pillarrshaped texture

Country Status (3)

Country Link
US (1) US4341589A (cg-RX-API-DMAC7.html)
JP (1) JPS55140791A (cg-RX-API-DMAC7.html)
DE (1) DE2914506A1 (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3107596A1 (de) * 1981-02-27 1982-10-21 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen "verfahren zur herstellung von halbleiterscheiben"
DE3310827A1 (de) * 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von grobkristallinem silicium
DE3427465A1 (de) * 1984-07-25 1986-01-30 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern
US5106763A (en) * 1988-11-15 1992-04-21 Mobil Solar Energy Corporation Method of fabricating solar cells
US5156978A (en) * 1988-11-15 1992-10-20 Mobil Solar Energy Corporation Method of fabricating solar cells
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
CA2232857C (en) * 1995-10-05 2003-05-13 Jalal Salami Structure and fabrication process for self-aligned locally deep-diffused emitter (salde) solar cell
JP3656821B2 (ja) 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP4111669B2 (ja) 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
US20110070724A1 (en) * 2009-09-21 2011-03-24 Applied Materials, Inc. Defect-free junction formation using octadecaborane self-amorphizing implants
JP7088322B2 (ja) * 2019-01-28 2022-06-21 村田機械株式会社 移載装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US762879A (en) * 1903-10-26 1904-06-21 Window Glass Machine Co Method of drawing glass.
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
FR1341687A (fr) * 1962-09-21 1963-11-02 Glaces De Boussois Perfectionnements à la fabrication continue du verre plat par étirage
US3294507A (en) * 1963-03-13 1966-12-27 Pittsburgh Plate Glass Co Transverse heat absorption from a drawn glass sheet subsequent to roll forming
BE788026A (fr) * 1971-08-26 1973-02-26 Siemens Ag Procede et dispositif d'introduction dirigee de matieres de dopage dansdes cristaux semiconducteurs lors d'une fusion par zones sans creuset
DE2508803C3 (de) 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
DE2633961C2 (de) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K. Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes
JPS5261180A (en) * 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons

Also Published As

Publication number Publication date
DE2914506C2 (cg-RX-API-DMAC7.html) 1988-03-10
US4341589A (en) 1982-07-27
JPS6343358B2 (cg-RX-API-DMAC7.html) 1988-08-30
DE2914506A1 (de) 1980-10-16

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