JPS55138875A - Method of fabricating gaas schottky barrier gate field effect transistor - Google Patents

Method of fabricating gaas schottky barrier gate field effect transistor

Info

Publication number
JPS55138875A
JPS55138875A JP4642879A JP4642879A JPS55138875A JP S55138875 A JPS55138875 A JP S55138875A JP 4642879 A JP4642879 A JP 4642879A JP 4642879 A JP4642879 A JP 4642879A JP S55138875 A JPS55138875 A JP S55138875A
Authority
JP
Japan
Prior art keywords
schottky barrier
layer
metal
temperature range
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4642879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6154263B2 (enrdf_load_stackoverflow
Inventor
Masao Uchida
Masao Ida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4642879A priority Critical patent/JPS55138875A/ja
Publication of JPS55138875A publication Critical patent/JPS55138875A/ja
Publication of JPS6154263B2 publication Critical patent/JPS6154263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP4642879A 1979-04-16 1979-04-16 Method of fabricating gaas schottky barrier gate field effect transistor Granted JPS55138875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4642879A JPS55138875A (en) 1979-04-16 1979-04-16 Method of fabricating gaas schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4642879A JPS55138875A (en) 1979-04-16 1979-04-16 Method of fabricating gaas schottky barrier gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS55138875A true JPS55138875A (en) 1980-10-30
JPS6154263B2 JPS6154263B2 (enrdf_load_stackoverflow) 1986-11-21

Family

ID=12746871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4642879A Granted JPS55138875A (en) 1979-04-16 1979-04-16 Method of fabricating gaas schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS55138875A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121098U (enrdf_load_stackoverflow) * 1981-01-20 1982-07-27
JPS61134077A (ja) * 1984-12-04 1986-06-21 Jido Keisoku Gijutsu Kenkiyuukumiai 半導体装置
US4824800A (en) * 1987-05-08 1989-04-25 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US6617660B2 (en) 1998-09-09 2003-09-09 Sanyo Electric Co., Ltd. Field effect transistor semiconductor and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121098U (enrdf_load_stackoverflow) * 1981-01-20 1982-07-27
JPS61134077A (ja) * 1984-12-04 1986-06-21 Jido Keisoku Gijutsu Kenkiyuukumiai 半導体装置
US4824800A (en) * 1987-05-08 1989-04-25 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US6617660B2 (en) 1998-09-09 2003-09-09 Sanyo Electric Co., Ltd. Field effect transistor semiconductor and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6154263B2 (enrdf_load_stackoverflow) 1986-11-21

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