JPS55138871A - Method of fabricating p-n hetero junction element - Google Patents
Method of fabricating p-n hetero junction elementInfo
- Publication number
- JPS55138871A JPS55138871A JP4529279A JP4529279A JPS55138871A JP S55138871 A JPS55138871 A JP S55138871A JP 4529279 A JP4529279 A JP 4529279A JP 4529279 A JP4529279 A JP 4529279A JP S55138871 A JPS55138871 A JP S55138871A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- polyacetylene
- polyacetylene film
- type semiconductor
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005842 heteroatom Chemical group 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract 6
- 229920001197 polyacetylene Polymers 0.000 abstract 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4529279A JPS55138871A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4529279A JPS55138871A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138871A true JPS55138871A (en) | 1980-10-30 |
JPS6223471B2 JPS6223471B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Family
ID=12715230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4529279A Granted JPS55138871A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138871A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263158A (ja) * | 1985-05-07 | 1986-11-21 | Mitsubishi Paper Mills Ltd | ヘテロ接合素子およびその製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02885A (ja) * | 1987-12-07 | 1990-01-05 | Ricoh Co Ltd | 半導体レーザユニツト |
JPH032878A (ja) * | 1989-05-31 | 1991-01-09 | Hitachi Ltd | 半導体レーザ記録装置 |
JPH09187987A (ja) * | 1996-01-09 | 1997-07-22 | Nec Corp | レーザ光走査装置 |
-
1979
- 1979-04-16 JP JP4529279A patent/JPS55138871A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263158A (ja) * | 1985-05-07 | 1986-11-21 | Mitsubishi Paper Mills Ltd | ヘテロ接合素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6223471B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55151329A (en) | Fabricating method of semiconductor device | |
JPS55138871A (en) | Method of fabricating p-n hetero junction element | |
JPS54155770A (en) | Manufacture of semiconductor device | |
ES474770A1 (es) | Un procedimiento de fabricacion de silicio policristalino | |
GB1426600A (en) | Method of etching a semiconductor element | |
JPS5737827A (en) | Manufacture of semiconductor device | |
JPS55123133A (en) | Manufacture of semiconductor device | |
JPS54127280A (en) | Semiconductor device | |
JPS56100436A (en) | Manufacture of semiconductor element | |
JPS5434676A (en) | Vapor growth method and apparatus for high-purity semiconductor layer | |
JPS5476629A (en) | Coating composition | |
JPS55145366A (en) | Ohmic electrode of n-type semiconductor of groups 3-5 metals in periodic table and forming method of the same | |
JPS5717179A (en) | Manufacture of semiconductor device for generating photoelectromotive force | |
JPS5799732A (en) | Semi-amorphous semiconductor | |
JPS5633845A (en) | Manufacture of semiconductor device | |
JPS5534470A (en) | Production for solar battery | |
JPS55130160A (en) | Fabricating method of p-n hetero junction element | |
GB1526937A (en) | Iii-v semiconductor photocathodes | |
JPS5773969A (en) | Manufacture of semiconductor device | |
JPS56138959A (en) | Wavelength division type solar battery | |
JPS5618485A (en) | Manufacture of semiconductor laser element | |
JPS57201015A (en) | Manufacture of semiconductor device | |
JPS57186344A (en) | Semiconductor device sealed in glass tube | |
JPS57204177A (en) | Manufacture of amorphous si solar battery | |
JPS5216974A (en) | Method of manufacturing air phase epitachisial growing layer of chemic al compound semiconductor |