JPS55138871A - Method of fabricating p-n hetero junction element - Google Patents
Method of fabricating p-n hetero junction elementInfo
- Publication number
- JPS55138871A JPS55138871A JP4529279A JP4529279A JPS55138871A JP S55138871 A JPS55138871 A JP S55138871A JP 4529279 A JP4529279 A JP 4529279A JP 4529279 A JP4529279 A JP 4529279A JP S55138871 A JPS55138871 A JP S55138871A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- polyacetylene
- polyacetylene film
- type semiconductor
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005842 heteroatom Chemical group 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract 6
- 229920001197 polyacetylene Polymers 0.000 abstract 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4529279A JPS55138871A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4529279A JPS55138871A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55138871A true JPS55138871A (en) | 1980-10-30 |
| JPS6223471B2 JPS6223471B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Family
ID=12715230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4529279A Granted JPS55138871A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55138871A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263158A (ja) * | 1985-05-07 | 1986-11-21 | Mitsubishi Paper Mills Ltd | ヘテロ接合素子およびその製造方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02885A (ja) * | 1987-12-07 | 1990-01-05 | Ricoh Co Ltd | 半導体レーザユニツト |
| JPH032878A (ja) * | 1989-05-31 | 1991-01-09 | Hitachi Ltd | 半導体レーザ記録装置 |
| JPH09187987A (ja) * | 1996-01-09 | 1997-07-22 | Nec Corp | レーザ光走査装置 |
-
1979
- 1979-04-16 JP JP4529279A patent/JPS55138871A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263158A (ja) * | 1985-05-07 | 1986-11-21 | Mitsubishi Paper Mills Ltd | ヘテロ接合素子およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223471B2 (enrdf_load_stackoverflow) | 1987-05-22 |
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