JPS55138270A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS55138270A
JPS55138270A JP4480979A JP4480979A JPS55138270A JP S55138270 A JPS55138270 A JP S55138270A JP 4480979 A JP4480979 A JP 4480979A JP 4480979 A JP4480979 A JP 4480979A JP S55138270 A JPS55138270 A JP S55138270A
Authority
JP
Japan
Prior art keywords
layer
layers
collector
junction
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4480979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262063B2 (enExample
Inventor
Akio Kayanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4480979A priority Critical patent/JPS55138270A/ja
Publication of JPS55138270A publication Critical patent/JPS55138270A/ja
Publication of JPS6262063B2 publication Critical patent/JPS6262063B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP4480979A 1979-04-12 1979-04-12 Semiconductor integrated circuit device Granted JPS55138270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4480979A JPS55138270A (en) 1979-04-12 1979-04-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4480979A JPS55138270A (en) 1979-04-12 1979-04-12 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS55138270A true JPS55138270A (en) 1980-10-28
JPS6262063B2 JPS6262063B2 (enExample) 1987-12-24

Family

ID=12701749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4480979A Granted JPS55138270A (en) 1979-04-12 1979-04-12 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55138270A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190779A (ja) * 1991-09-24 1993-07-30 Matsushita Electron Corp 半導体集積回路装置とその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190779A (ja) * 1991-09-24 1993-07-30 Matsushita Electron Corp 半導体集積回路装置とその製造方法

Also Published As

Publication number Publication date
JPS6262063B2 (enExample) 1987-12-24

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