JPS55138263A - Manufacture of glass passivated semiconductor device - Google Patents
Manufacture of glass passivated semiconductor deviceInfo
- Publication number
- JPS55138263A JPS55138263A JP4500379A JP4500379A JPS55138263A JP S55138263 A JPS55138263 A JP S55138263A JP 4500379 A JP4500379 A JP 4500379A JP 4500379 A JP4500379 A JP 4500379A JP S55138263 A JPS55138263 A JP S55138263A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- bevel angle
- family
- constitution
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To make a high withstand voltage device available by a method wherein a cut groove which is cut to form a positive bevel angle less than 45 deg. is provided on a substrate which has a pn-junction and filled with ZnO glass or its family and PbO glass or its family sequentially. CONSTITUTION:An n<->-layer 12, a p-layer 13 and an n<+>-layer 14 are laminated on an n<+>-type Si substrate 11. They are covered with an SiO2 15, and resin is applied on it, and by a blade dicer which is applied to form an angle more than 45 deg. to the vertical plane of the substrate, grooves 18 are cut into layers 12, 13 to form a positive bevel angle. By this constitution higher withstand voltage than that of a negative bevel angle is gained, and surface electric field intensity taking maximum value at a position bevel angle of 45 deg., a bevel angle below 45 deg. is taken. Next thereto by a selective electrophoretic process ZnO glass 19 or its family is applied and furthermore PbO glass 20 or its family is laminated on it, and glasses 19, 20 are calcined with a calcining condition of glass 19, and electrodes 21-23 are built. By this constitution a device of high withstand voltage and reliability is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4500379A JPS55138263A (en) | 1979-04-13 | 1979-04-13 | Manufacture of glass passivated semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4500379A JPS55138263A (en) | 1979-04-13 | 1979-04-13 | Manufacture of glass passivated semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55138263A true JPS55138263A (en) | 1980-10-28 |
Family
ID=12707212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4500379A Pending JPS55138263A (en) | 1979-04-13 | 1979-04-13 | Manufacture of glass passivated semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138263A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198318A (en) * | 1989-06-06 | 1993-03-30 | Fuji Electric Co., Ltd. | Bisazo photoconductor for electrophotography |
US5275898A (en) * | 1989-06-06 | 1994-01-04 | Fuji Electric Co., Ltd. | Bisazo photoconductor for electrophotography |
US5316881A (en) * | 1991-12-27 | 1994-05-31 | Fuji Electric Co., Ltd. | Photoconductor for electrophotgraphy containing benzidine derivative |
US5368966A (en) * | 1992-05-14 | 1994-11-29 | Fuji Electric Co., Ltd. | Photosensitive member for electrophotography with indole derivative |
US5393627A (en) * | 1992-02-12 | 1995-02-28 | Fuji Electric Co., Ltd. | Photoconductor for electrophotography |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326574A (en) * | 1976-08-24 | 1978-03-11 | Toshiba Corp | Production of semiconductor unit |
-
1979
- 1979-04-13 JP JP4500379A patent/JPS55138263A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326574A (en) * | 1976-08-24 | 1978-03-11 | Toshiba Corp | Production of semiconductor unit |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198318A (en) * | 1989-06-06 | 1993-03-30 | Fuji Electric Co., Ltd. | Bisazo photoconductor for electrophotography |
US5275898A (en) * | 1989-06-06 | 1994-01-04 | Fuji Electric Co., Ltd. | Bisazo photoconductor for electrophotography |
US5286590A (en) * | 1989-06-06 | 1994-02-15 | Fuji Electric Co., Ltd. | Bisazo photoconductor for electrophotography |
US5292602A (en) * | 1989-06-06 | 1994-03-08 | Fugi Electric Co., Ltd. | Bisazo photoconductor for electrophotography |
US5292608A (en) * | 1989-06-06 | 1994-03-08 | Fugi Electric Co., Ltd. | Bisazo photoconductor for electrophotography |
US5316881A (en) * | 1991-12-27 | 1994-05-31 | Fuji Electric Co., Ltd. | Photoconductor for electrophotgraphy containing benzidine derivative |
US5393627A (en) * | 1992-02-12 | 1995-02-28 | Fuji Electric Co., Ltd. | Photoconductor for electrophotography |
US5368966A (en) * | 1992-05-14 | 1994-11-29 | Fuji Electric Co., Ltd. | Photosensitive member for electrophotography with indole derivative |
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