JPS55138263A - Manufacture of glass passivated semiconductor device - Google Patents

Manufacture of glass passivated semiconductor device

Info

Publication number
JPS55138263A
JPS55138263A JP4500379A JP4500379A JPS55138263A JP S55138263 A JPS55138263 A JP S55138263A JP 4500379 A JP4500379 A JP 4500379A JP 4500379 A JP4500379 A JP 4500379A JP S55138263 A JPS55138263 A JP S55138263A
Authority
JP
Japan
Prior art keywords
glass
bevel angle
family
constitution
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4500379A
Other languages
Japanese (ja)
Inventor
Michio Ichikawa
Shigefumi Kadowaki
Yasuo Shimizu
Yasushi Yanagida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4500379A priority Critical patent/JPS55138263A/en
Publication of JPS55138263A publication Critical patent/JPS55138263A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make a high withstand voltage device available by a method wherein a cut groove which is cut to form a positive bevel angle less than 45 deg. is provided on a substrate which has a pn-junction and filled with ZnO glass or its family and PbO glass or its family sequentially. CONSTITUTION:An n<->-layer 12, a p-layer 13 and an n<+>-layer 14 are laminated on an n<+>-type Si substrate 11. They are covered with an SiO2 15, and resin is applied on it, and by a blade dicer which is applied to form an angle more than 45 deg. to the vertical plane of the substrate, grooves 18 are cut into layers 12, 13 to form a positive bevel angle. By this constitution higher withstand voltage than that of a negative bevel angle is gained, and surface electric field intensity taking maximum value at a position bevel angle of 45 deg., a bevel angle below 45 deg. is taken. Next thereto by a selective electrophoretic process ZnO glass 19 or its family is applied and furthermore PbO glass 20 or its family is laminated on it, and glasses 19, 20 are calcined with a calcining condition of glass 19, and electrodes 21-23 are built. By this constitution a device of high withstand voltage and reliability is obtained.
JP4500379A 1979-04-13 1979-04-13 Manufacture of glass passivated semiconductor device Pending JPS55138263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4500379A JPS55138263A (en) 1979-04-13 1979-04-13 Manufacture of glass passivated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4500379A JPS55138263A (en) 1979-04-13 1979-04-13 Manufacture of glass passivated semiconductor device

Publications (1)

Publication Number Publication Date
JPS55138263A true JPS55138263A (en) 1980-10-28

Family

ID=12707212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4500379A Pending JPS55138263A (en) 1979-04-13 1979-04-13 Manufacture of glass passivated semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138263A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198318A (en) * 1989-06-06 1993-03-30 Fuji Electric Co., Ltd. Bisazo photoconductor for electrophotography
US5275898A (en) * 1989-06-06 1994-01-04 Fuji Electric Co., Ltd. Bisazo photoconductor for electrophotography
US5316881A (en) * 1991-12-27 1994-05-31 Fuji Electric Co., Ltd. Photoconductor for electrophotgraphy containing benzidine derivative
US5368966A (en) * 1992-05-14 1994-11-29 Fuji Electric Co., Ltd. Photosensitive member for electrophotography with indole derivative
US5393627A (en) * 1992-02-12 1995-02-28 Fuji Electric Co., Ltd. Photoconductor for electrophotography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326574A (en) * 1976-08-24 1978-03-11 Toshiba Corp Production of semiconductor unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326574A (en) * 1976-08-24 1978-03-11 Toshiba Corp Production of semiconductor unit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198318A (en) * 1989-06-06 1993-03-30 Fuji Electric Co., Ltd. Bisazo photoconductor for electrophotography
US5275898A (en) * 1989-06-06 1994-01-04 Fuji Electric Co., Ltd. Bisazo photoconductor for electrophotography
US5286590A (en) * 1989-06-06 1994-02-15 Fuji Electric Co., Ltd. Bisazo photoconductor for electrophotography
US5292602A (en) * 1989-06-06 1994-03-08 Fugi Electric Co., Ltd. Bisazo photoconductor for electrophotography
US5292608A (en) * 1989-06-06 1994-03-08 Fugi Electric Co., Ltd. Bisazo photoconductor for electrophotography
US5316881A (en) * 1991-12-27 1994-05-31 Fuji Electric Co., Ltd. Photoconductor for electrophotgraphy containing benzidine derivative
US5393627A (en) * 1992-02-12 1995-02-28 Fuji Electric Co., Ltd. Photoconductor for electrophotography
US5368966A (en) * 1992-05-14 1994-11-29 Fuji Electric Co., Ltd. Photosensitive member for electrophotography with indole derivative

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